Formation of single tiers of bridging silicon nanowires for transistor applications using vapor-liquid-solid growth from short silicon-on-insulator sidewalls

Osama M. Nayfeh, Dimitri A. Antoniadis, Steven Tyler Boles, Charles Ho, Carl V. Thompson

Research output: Journal article publicationJournal articleAcademic researchpeer-review

9 Citations (Scopus)


Single tiers of silicon nanowires that bridge the gap between the short sidewalls of silicon-on-insulator (SOI) source/drain pads are formed. The formation of a single tier of bridging nanowires is enabled by the attachment of a single tier of Au catalyst nanoparticles to short SOI sidewalls and the subsequent growth of epitaxial nanowires via the vapor-liquid-solid (VLS) process. The growth of unobstructed nanowire material occurs due to the attachment of catalyst nanoparticles on silicon surfaces and the removal of catalyst nanoparticles from the SOI-buried oxide (BOX). Three-terminal current-voltage measurements of the structure using the substrate as a planar backgate after VLS nanowire growth reveal transistor behaviour characteristics. KGaA.
Original languageEnglish
Pages (from-to)2440-2444
Number of pages5
Issue number21
Publication statusPublished - 2 Nov 2009
Externally publishedYes


  • Insulators
  • Nanowires
  • Silicon
  • Transistors
  • Vapor-liquid-solid growth

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Engineering (miscellaneous)

Cite this