Formation of cobalt silicide spikes in 0.18 μm complementary metal oxide semiconductor process

Jiyan Dai, Z. R. Guo, S. F. Tee, C. L. Tay, Eddie Er, S. Redkar

Research output: Journal article publicationJournal articleAcademic researchpeer-review

21 Citations (Scopus)


Co silicide spikes have been found in active contact salicidation in complementary metal oxide semiconductor devices during failure analysis by means of transmission electron microscopy examination. Scanning transmission electron microscopy, energy dispersive x-ray analysis and microdiffraction study revealed that these spikes are CoSi2with an epitaxial relationship with Si of (111)CoSi2//(111)Si and [11̄0]CoSi2//[11̄0]Si. The formation of the CoSi2spikes are suspected to be due to the presence of undesired SiOx residue between Co film and Si substrate which acts as a solid diffusion membrane to cause the Si rich phase CoSi2to precipitate directly inside Si lattice.
Original languageEnglish
Pages (from-to)3091-3093
Number of pages3
JournalApplied Physics Letters
Issue number20
Publication statusPublished - 14 May 2001
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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