Formation conditions of random laser cavities in annealed ZnO epilayers

Clement Yuen; Siu Fung Yu; Eunice S.P. Leong; H. Y. Yang; Shu Ping Lau; H. H. Hng

doi:10.1109/JQE.2005.847903

Formation conditions of random laser cavities in annealed ZnO epilayers

Clement Yuen, Siu Fung Yu, Eunice S.P. Leong, H. Y. Yang, Shu Ping Lau, H. H. Hng

Research output: Journal article publication › Journal article › Academic research › peer-review

17 Citations (Scopus)

Abstract

The possibilities to realize room-temperature random laser action in ZnO epilayers with MgO as the buffer layer are studied. It is found that the formation of random laser cavities inside the ZnO epilayers can be achieved by post-growth annealing. Incoherent anal coherent random lasing phenomena are observed from ZnO epilayers with (220)- and (200)-oriented MgO buffer layers, respectively. Lasing linewidth of the ZnO epilayers with incoherent and coherent feedback under 355-nm optical excitation is found to be ∼4 and ∼0.4 nm, respectively.

Original language	English
Pages (from-to)	970-973
Number of pages	4
Journal	IEEE Journal of Quantum Electronics
Volume	41
Issue number	7
DOIs	https://doi.org/10.1109/JQE.2005.847903
Publication status	Published - 1 Jul 2005
Externally published	Yes

Keywords

Optical waveguide
Random lasing
Ultraviolet emission
Zinc oxide

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2005.847903

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title = "Formation conditions of random laser cavities in annealed ZnO epilayers",

abstract = "The possibilities to realize room-temperature random laser action in ZnO epilayers with MgO as the buffer layer are studied. It is found that the formation of random laser cavities inside the ZnO epilayers can be achieved by post-growth annealing. Incoherent anal coherent random lasing phenomena are observed from ZnO epilayers with (220)- and (200)-oriented MgO buffer layers, respectively. Lasing linewidth of the ZnO epilayers with incoherent and coherent feedback under 355-nm optical excitation is found to be ∼4 and ∼0.4 nm, respectively.",

keywords = "Optical waveguide, Random lasing, Ultraviolet emission, Zinc oxide",

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AU - Yuen, Clement

AU - Yu, Siu Fung

AU - Leong, Eunice S.P.

AU - Yang, H. Y.

AU - Lau, Shu Ping

AU - Hng, H. H.

PY - 2005/7/1

Y1 - 2005/7/1

N2 - The possibilities to realize room-temperature random laser action in ZnO epilayers with MgO as the buffer layer are studied. It is found that the formation of random laser cavities inside the ZnO epilayers can be achieved by post-growth annealing. Incoherent anal coherent random lasing phenomena are observed from ZnO epilayers with (220)- and (200)-oriented MgO buffer layers, respectively. Lasing linewidth of the ZnO epilayers with incoherent and coherent feedback under 355-nm optical excitation is found to be ∼4 and ∼0.4 nm, respectively.

AB - The possibilities to realize room-temperature random laser action in ZnO epilayers with MgO as the buffer layer are studied. It is found that the formation of random laser cavities inside the ZnO epilayers can be achieved by post-growth annealing. Incoherent anal coherent random lasing phenomena are observed from ZnO epilayers with (220)- and (200)-oriented MgO buffer layers, respectively. Lasing linewidth of the ZnO epilayers with incoherent and coherent feedback under 355-nm optical excitation is found to be ∼4 and ∼0.4 nm, respectively.

KW - Optical waveguide

KW - Random lasing

KW - Ultraviolet emission

KW - Zinc oxide

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DO - 10.1109/JQE.2005.847903

M3 - Journal article

SN - 0018-9197

VL - 41

SP - 970

EP - 973

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 7

ER -

Formation conditions of random laser cavities in annealed ZnO epilayers

Abstract

Keywords

ASJC Scopus subject areas

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