Formation conditions of random laser cavities in annealed ZnO epilayers

Clement Yuen, Siu Fung Yu, Eunice S.P. Leong, H. Y. Yang, Shu Ping Lau, H. H. Hng

Research output: Journal article publicationJournal articleAcademic researchpeer-review

17 Citations (Scopus)


The possibilities to realize room-temperature random laser action in ZnO epilayers with MgO as the buffer layer are studied. It is found that the formation of random laser cavities inside the ZnO epilayers can be achieved by post-growth annealing. Incoherent anal coherent random lasing phenomena are observed from ZnO epilayers with (220)- and (200)-oriented MgO buffer layers, respectively. Lasing linewidth of the ZnO epilayers with incoherent and coherent feedback under 355-nm optical excitation is found to be ∼4 and ∼0.4 nm, respectively.
Original languageEnglish
Pages (from-to)970-973
Number of pages4
JournalIEEE Journal of Quantum Electronics
Issue number7
Publication statusPublished - 1 Jul 2005
Externally publishedYes


  • Optical waveguide
  • Random lasing
  • Ultraviolet emission
  • Zinc oxide

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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