TY - JOUR
T1 - Fluorinated fused nonacyclic interfacial materials for efficient and stable perovskite solar cells
AU - Liu, Kuan
AU - Dai, Shuixing
AU - Meng, Fanqi
AU - Shi, Jiangjian
AU - Li, Yusheng
AU - Wu, Jionghua
AU - Meng, Qingbo
AU - Zhan, Xiaowei
N1 - Funding Information:
We thank the National Natural Science Foundation of China (No. 21673011) for nancial support.
Publisher Copyright:
© 2017 The Royal Society of Chemistry.
PY - 2017/9
Y1 - 2017/9
N2 - Three fused-ring n-type semiconductors based on 6,6,12,12-tetrakis(4-hexylphenyl)-indacenobis(dithieno[3,2-b;2,3-d]thiophene) end-capped with 1,1-dicyanomethylene-3-indanone substituted by different numbers of fluorine atoms (INIC series) are employed as interfacial materials to modify the surface of the perovskite film in inverted planar perovskite solar cells (PSCs). Due to fast interfacial charge extraction and efficient trap passivation, PSCs based on INIC series exhibit a maximum power conversion efficiency of 19.3% without any hysteresis, which is superior to control devices without INIC series (16.6%). Moreover, the strong water-resistance ability of fluorinated INIC significantly enhances the ambient stability of the PSCs. The effects of fluorine atom number on the device performance are discussed.
AB - Three fused-ring n-type semiconductors based on 6,6,12,12-tetrakis(4-hexylphenyl)-indacenobis(dithieno[3,2-b;2,3-d]thiophene) end-capped with 1,1-dicyanomethylene-3-indanone substituted by different numbers of fluorine atoms (INIC series) are employed as interfacial materials to modify the surface of the perovskite film in inverted planar perovskite solar cells (PSCs). Due to fast interfacial charge extraction and efficient trap passivation, PSCs based on INIC series exhibit a maximum power conversion efficiency of 19.3% without any hysteresis, which is superior to control devices without INIC series (16.6%). Moreover, the strong water-resistance ability of fluorinated INIC significantly enhances the ambient stability of the PSCs. The effects of fluorine atom number on the device performance are discussed.
UR - http://www.scopus.com/inward/record.url?scp=85031680746&partnerID=8YFLogxK
U2 - 10.1039/c7ta06923e
DO - 10.1039/c7ta06923e
M3 - Journal article
AN - SCOPUS:85031680746
SN - 2050-7488
VL - 5
SP - 21414
EP - 21421
JO - Journal of Materials Chemistry A
JF - Journal of Materials Chemistry A
IS - 40
ER -