Flexoelectricity in a metal/ferroelectric/semiconductor heterostructure

Shujin Huang, Hei Man Yau, Hyeonggeun Yu, Lu Qi, Franky So, Ji Yan Dai, Xiaoning Jiang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)


The flexoelectricity in a 100 nm-thick BaTiO3 (BTO) thin film based metal/ferroelectric insulator/semiconductor (MFS) heterostructure was reported in this letter. The transverse flexoelectric coefficient of the BTO thin film in the heterojunction structure was measured to be 287-418 μC/m at room temperature, and its temperature dependence shows that the flexoelectric effect in the BTO thin film was dominated in the paraelectric phase. We showed that the BTO thin film capacitance could be controlled at multi-levels by introducing ferroelectric and flexoelectric polarization in the film. These results are promising for understanding of the flexoelectricity in epitaxial ferroelectric thin films and practical applications of the enhanced flexoelectricity in nanoscale devices.

Original languageEnglish
Article number065321
JournalAIP Advances
Issue number6
Publication statusPublished - 1 Jun 2018

ASJC Scopus subject areas

  • General Physics and Astronomy


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