Flexoelectric Modulation on the Two-Dimensional Electron Gas at (110) LaAlO3/SrTiO3Interfaces

Fan Zhang, Wei Min Jiang, Cheng Jian Li, Yangshi Jin, Zelong Wang, Jia Cai Nie, Ji Yan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)


Flexoelectricity has been proven to be an effective way in tailoring a material's properties. Here, we report the flexoelectricity-induced transport modulation to the two-dimensional electron gas at the (110) LaAlO3/SrTiO3 systems. Under different strain gradients induced by mechanical bending, the interfacial resistance changes according to the flexoelectric field directions. By measuring the electrical transport properties of the interface under variant strain states, we demonstrate that the modulation effect is affected by the oxygen partial pressure during film deposition. The electrical field effect model can thoroughly explain the observations. These findings further clarify the physical picture of flexoelectric effects in oxide heterostructures.

Original languageEnglish
Pages (from-to)1861-1866
Number of pages6
JournalACS Applied Electronic Materials
Issue number7
Publication statusPublished - 28 Jul 2020


  • flexoelectricity
  • interface modulation
  • LaAlO/SrTiO
  • oxide heterostructure
  • two-dimensional electron gas

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrochemistry


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