Filtered cathodic vacuum arc deposition of thin film copper

Shu Ping Lau, Y. H. Cheng, J. R. Shi, P. Cao, B. K. Tay, X. Shi

Research output: Journal article publicationJournal articleAcademic researchpeer-review

9 Citations (Scopus)

Abstract

A major obstacle for metallization application of filtered cathodic vacuum arc (FCVA) is the presence of micro-particles. By using an off-plane double bend magnetic filter, metallic films can be deposited with relevant deposition rates and free of micro-particles. Clean copper thin films with low electrical resistivity were deposited by filtered cathodic vacuum arc techniques at room temperature. All the copper films have a polycrystalline structure and preferably oriented to (111). When the substrate bias is applied, the (111) orientation of Cu film is further enhanced. The internal stress of the films is strongly dependent on the substrate bias. When the bias increases from 0 to -600 V, the internal stress of the film changes from tensile to compressive. At the bias of -300 V, a stress-free Cu film can be obtained.
Original languageEnglish
Pages (from-to)539-543
Number of pages5
JournalThin Solid Films
Volume398
Issue number399
DOIs
Publication statusPublished - 1 Jan 2001
Externally publishedYes

Keywords

  • Copper films
  • Filtered cathodic vacuum arc

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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