Filtered cathodic vacuum arc deposition of copper thin film

J. R. Shi; Shu Ping Lau; Z. Sun; X. Shi; B. K. Tay; H. S. Tan

doi:10.1049/el:20000861

Filtered cathodic vacuum arc deposition of copper thin film

J. R. Shi, Shu Ping Lau, Z. Sun, X. Shi, B. K. Tay, H. S. Tan

Research output: Journal article publication › Journal article › Academic research › peer-review

2 Citations (Scopus)

Abstract

Copper thin films with low electrical resistivity were successfully deposited using a filtered cathodic vacuum arc technique at room temperature. It was found that there is a critical film thickness of approximately 135 nm, above which the resistivity has an almost unchanged value of 1.8 μΩ cm. Below the critical thickness, the resistivity increases with decreasing thickness and is correlated with the copper grain size measured by AFM and X-ray diffraction.

Original language	English
Pages (from-to)	1205-1207
Number of pages	3
Journal	Electronics Letters
Volume	36
Issue number	14
DOIs	https://doi.org/10.1049/el:20000861
Publication status	Published - 6 Jul 2000
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20000861

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abstract = "Copper thin films with low electrical resistivity were successfully deposited using a filtered cathodic vacuum arc technique at room temperature. It was found that there is a critical film thickness of approximately 135 nm, above which the resistivity has an almost unchanged value of 1.8 μΩ cm. Below the critical thickness, the resistivity increases with decreasing thickness and is correlated with the copper grain size measured by AFM and X-ray diffraction.",

author = "Shi, {J. R.} and Lau, {Shu Ping} and Z. Sun and X. Shi and Tay, {B. K.} and Tan, {H. S.}",

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AU - Shi, J. R.

AU - Lau, Shu Ping

AU - Sun, Z.

AU - Shi, X.

AU - Tay, B. K.

AU - Tan, H. S.

PY - 2000/7/6

Y1 - 2000/7/6

N2 - Copper thin films with low electrical resistivity were successfully deposited using a filtered cathodic vacuum arc technique at room temperature. It was found that there is a critical film thickness of approximately 135 nm, above which the resistivity has an almost unchanged value of 1.8 μΩ cm. Below the critical thickness, the resistivity increases with decreasing thickness and is correlated with the copper grain size measured by AFM and X-ray diffraction.

AB - Copper thin films with low electrical resistivity were successfully deposited using a filtered cathodic vacuum arc technique at room temperature. It was found that there is a critical film thickness of approximately 135 nm, above which the resistivity has an almost unchanged value of 1.8 μΩ cm. Below the critical thickness, the resistivity increases with decreasing thickness and is correlated with the copper grain size measured by AFM and X-ray diffraction.

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DO - 10.1049/el:20000861

M3 - Journal article

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Filtered cathodic vacuum arc deposition of copper thin film

Abstract

ASJC Scopus subject areas

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