Field emission properties and surface structure of nickel containing amorphous carbon

G. Y. Chen; J. S. Chen; Z. Sun; Y. J. Li; Shu Ping Lau; B. K. Tay; J. W. Chai

doi:10.1016/S0169-4332(01)00328-2

Field emission properties and surface structure of nickel containing amorphous carbon

G. Y. Chen, J. S. Chen, Z. Sun, Y. J. Li, Shu Ping Lau, B. K. Tay, J. W. Chai

Research output: Journal article publication › Journal article › Academic research › peer-review

20 Citations (Scopus)

Abstract

Nickel containing amorphous carbon (a-C:Ni) films have been deposited by filtered cathodic vacuum arc (FCVA) technique by introducing pure nickel into the graphite target. The field electron emission property of a-C:Ni was improved when compared to that of pure tetrahedral amorphous carbon (ta-C) by FCVA. The emission threshold field of a-C:Ni film is about 5 V μm-1, whilst the threshold field of the ta-C film is about 13 V μm-1. Raman spectroscopy suggests that the sp2clusters in the carbon film increase both in size and number when Ni is introduced. However, the emission was found to degrade to threshold fields beyond 20 V μm-1after the a-C:Ni film was left in ambient for a week. This observation is attributed to surface absorption of oxygen on the a-C:Ni film, as determined by X-ray Photoelectron Spectroscopy.

Original language	English
Pages (from-to)	185-190
Number of pages	6
Journal	Applied Surface Science
Volume	180
Issue number	3-4
DOIs	https://doi.org/10.1016/S0169-4332(01)00328-2
Publication status	Published - 16 Aug 2001
Externally published	Yes

Keywords

Amorphous carbon (ta-C)
Indium-tin-oxide (ITO)
Tetrahedral amorphous carbon (ta-C)

ASJC Scopus subject areas

Surfaces, Coatings and Films

More information

10.1016/S0169-4332(01)00328-2

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title = "Field emission properties and surface structure of nickel containing amorphous carbon",

abstract = "Nickel containing amorphous carbon (a-C:Ni) films have been deposited by filtered cathodic vacuum arc (FCVA) technique by introducing pure nickel into the graphite target. The field electron emission property of a-C:Ni was improved when compared to that of pure tetrahedral amorphous carbon (ta-C) by FCVA. The emission threshold field of a-C:Ni film is about 5 V μm-1, whilst the threshold field of the ta-C film is about 13 V μm-1. Raman spectroscopy suggests that the sp2clusters in the carbon film increase both in size and number when Ni is introduced. However, the emission was found to degrade to threshold fields beyond 20 V μm-1after the a-C:Ni film was left in ambient for a week. This observation is attributed to surface absorption of oxygen on the a-C:Ni film, as determined by X-ray Photoelectron Spectroscopy.",

keywords = "Amorphous carbon (ta-C), Indium-tin-oxide (ITO), Tetrahedral amorphous carbon (ta-C)",

author = "Chen, {G. Y.} and Chen, {J. S.} and Z. Sun and Li, {Y. J.} and Lau, {Shu Ping} and Tay, {B. K.} and Chai, {J. W.}",

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T1 - Field emission properties and surface structure of nickel containing amorphous carbon

AU - Chen, G. Y.

AU - Chen, J. S.

AU - Sun, Z.

AU - Li, Y. J.

AU - Lau, Shu Ping

AU - Tay, B. K.

AU - Chai, J. W.

PY - 2001/8/16

Y1 - 2001/8/16

N2 - Nickel containing amorphous carbon (a-C:Ni) films have been deposited by filtered cathodic vacuum arc (FCVA) technique by introducing pure nickel into the graphite target. The field electron emission property of a-C:Ni was improved when compared to that of pure tetrahedral amorphous carbon (ta-C) by FCVA. The emission threshold field of a-C:Ni film is about 5 V μm-1, whilst the threshold field of the ta-C film is about 13 V μm-1. Raman spectroscopy suggests that the sp2clusters in the carbon film increase both in size and number when Ni is introduced. However, the emission was found to degrade to threshold fields beyond 20 V μm-1after the a-C:Ni film was left in ambient for a week. This observation is attributed to surface absorption of oxygen on the a-C:Ni film, as determined by X-ray Photoelectron Spectroscopy.

AB - Nickel containing amorphous carbon (a-C:Ni) films have been deposited by filtered cathodic vacuum arc (FCVA) technique by introducing pure nickel into the graphite target. The field electron emission property of a-C:Ni was improved when compared to that of pure tetrahedral amorphous carbon (ta-C) by FCVA. The emission threshold field of a-C:Ni film is about 5 V μm-1, whilst the threshold field of the ta-C film is about 13 V μm-1. Raman spectroscopy suggests that the sp2clusters in the carbon film increase both in size and number when Ni is introduced. However, the emission was found to degrade to threshold fields beyond 20 V μm-1after the a-C:Ni film was left in ambient for a week. This observation is attributed to surface absorption of oxygen on the a-C:Ni film, as determined by X-ray Photoelectron Spectroscopy.

KW - Amorphous carbon (ta-C)

KW - Indium-tin-oxide (ITO)

KW - Tetrahedral amorphous carbon (ta-C)

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U2 - 10.1016/S0169-4332(01)00328-2

DO - 10.1016/S0169-4332(01)00328-2

M3 - Journal article

SN - 0169-4332

VL - 180

SP - 185

EP - 190

JO - Applied Surface Science

JF - Applied Surface Science

IS - 3-4

ER -

Field emission properties and surface structure of nickel containing amorphous carbon

Abstract

Keywords

ASJC Scopus subject areas

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