Field-Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition

Zhibin Yang; Jianhua Hao; Shuoguo Yuan; Shenghuang Lin; Hei Man Yau; Jiyan Dai; Shu Ping Lau

doi:10.1002/adma.201500990

Field-Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition

Zhibin Yang
, Jianhua Hao
, Shuoguo Yuan
, Shenghuang Lin
, Hei Man Yau
, Jiyan Dai
, Shu Ping Lau

Research output: Journal article publication › Journal article › Academic research › peer-review

306 Citations (Scopus)

Abstract

KGaA, Weinheim. Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic devices.

Original language	English
Pages (from-to)	3748-3754
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	25
DOIs	https://doi.org/10.1002/adma.201500990
Publication status	Published - 1 Jul 2015

Keywords

amorphous ultrathin films
black phosphorus
field-effect transistors
pulsed laser deposition
wafer-scale

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

More information

10.1002/adma.201500990

Cite this

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title = "Field-Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition",

abstract = "KGaA, Weinheim. Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic devices.",

keywords = "amorphous ultrathin films, black phosphorus, field-effect transistors, pulsed laser deposition, wafer-scale",

author = "Zhibin Yang and Jianhua Hao and Shuoguo Yuan and Shenghuang Lin and Yau, \{Hei Man\} and Jiyan Dai and Lau, \{Shu Ping\}",

year = "2015",

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doi = "10.1002/adma.201500990",

language = "English",

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T1 - Field-Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition

AU - Yang, Zhibin

AU - Hao, Jianhua

AU - Yuan, Shuoguo

AU - Lin, Shenghuang

AU - Yau, Hei Man

AU - Dai, Jiyan

AU - Lau, Shu Ping

PY - 2015/7/1

Y1 - 2015/7/1

N2 - KGaA, Weinheim. Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic devices.

AB - KGaA, Weinheim. Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic devices.

KW - amorphous ultrathin films

KW - black phosphorus

KW - field-effect transistors

KW - pulsed laser deposition

KW - wafer-scale

UR - https://www.scopus.com/pages/publications/84934281296

U2 - 10.1002/adma.201500990

DO - 10.1002/adma.201500990

M3 - Journal article

SN - 0935-9648

VL - 27

SP - 3748

EP - 3754

JO - Advanced Materials

JF - Advanced Materials

IS - 25

ER -

Field-Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition

Abstract

Keywords

ASJC Scopus subject areas

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