Field-Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition

Zhibin Yang, Jianhua Hao, Shuoguo Yuan, Shenghuang Lin, Hei Man Yau, Jiyan Dai, Shu Ping Lau

Research output: Journal article publicationJournal articleAcademic researchpeer-review

204 Citations (Scopus)


KGaA, Weinheim. Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic devices.
Original languageEnglish
Pages (from-to)3748-3754
Number of pages7
JournalAdvanced Materials
Issue number25
Publication statusPublished - 1 Jul 2015


  • amorphous ultrathin films
  • black phosphorus
  • field-effect transistors
  • pulsed laser deposition
  • wafer-scale

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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