Field-Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition

Zhibin Yang; Jianhua Hao; Shuoguo Yuan; Shenghuang Lin; Hei Man Yau; Jiyan Dai; Shu Ping Lau

doi:10.1002/adma.201500990

Field-Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition

Zhibin Yang, Jianhua Hao, Shuoguo Yuan, Shenghuang Lin, Hei Man Yau, Jiyan Dai, Shu Ping Lau

Research output: Journal article publication › Journal article › Academic research › peer-review

291 Citations (Scopus)

Abstract

KGaA, Weinheim. Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic devices.

Original language	English
Pages (from-to)	3748-3754
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	25
DOIs	https://doi.org/10.1002/adma.201500990
Publication status	Published - 1 Jul 2015

Keywords

amorphous ultrathin films
black phosphorus
field-effect transistors
pulsed laser deposition
wafer-scale

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201500990

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title = "Field-Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition",

abstract = "KGaA, Weinheim. Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic devices.",

keywords = "amorphous ultrathin films, black phosphorus, field-effect transistors, pulsed laser deposition, wafer-scale",

author = "Zhibin Yang and Jianhua Hao and Shuoguo Yuan and Shenghuang Lin and Yau, {Hei Man} and Jiyan Dai and Lau, {Shu Ping}",

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AU - Yang, Zhibin

AU - Hao, Jianhua

AU - Yuan, Shuoguo

AU - Lin, Shenghuang

AU - Yau, Hei Man

AU - Dai, Jiyan

AU - Lau, Shu Ping

PY - 2015/7/1

Y1 - 2015/7/1

N2 - KGaA, Weinheim. Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic devices.

AB - KGaA, Weinheim. Amorphous black phosphorus (a-BP) ultrathin films are deposited by pulsed laser deposition. a-BP field-effect transistors, exhibiting high carrier mobility and moderate on/off current ratio, are demonstrated. Thickness dependence of the bandgap, mobility, and on/off ratio are observed. These results offer not only a new nanoscale member in the BP family, but also a new opportunity to develop nanoelectronic devices.

KW - amorphous ultrathin films

KW - black phosphorus

KW - field-effect transistors

KW - pulsed laser deposition

KW - wafer-scale

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JO - Advanced Materials

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IS - 25

ER -

Field-Effect Transistors Based on Amorphous Black Phosphorus Ultrathin Films by Pulsed Laser Deposition

Abstract

Keywords

ASJC Scopus subject areas

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