Ferromagnetism in Cu-Doped ZnO films prepared by filtered cathodic vacuum arc technique

T. S. Hemg; Shu Ping Lau; Siu Fung Yu

doi:10.1149/1.2913421

Ferromagnetism in Cu-Doped ZnO films prepared by filtered cathodic vacuum arc technique

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

Conductive copper-doped ZnO (ZnO:Cu) films exhibited room temperature ferromagnetism were fabricated by the filtered cathodic vacuum are technique. The electron concentration and conductivity of the samples can be increased from 1016 to 1020 cm-3 and 0.31 to 194 (ω-cm)-1 respectively, using the substrate biasing technique. However, this technique degrades the magnetic ordering of the conductive ZnO:Cu films. The magnetization of the films is not proportional to the increment of carrier concentration, suggesting carrier induce exchange is not directly responsible for magnetic properties. The magnetism of the biased ZnO:Cu is correlated to the crystal orientation, crystal quality and density of Zn interstitial.

Original language	English
Title of host publication	ECS Transactions - State-of-the-Art Program on Compound Semiconductors 48, SOTAPOCS 48 -and- ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications
Pages	143-149
Number of pages	7
Volume	13
Edition	3
DOIs	https://doi.org/10.1149/1.2913421
Publication status	Published - 17 Nov 2008
Externally published	Yes
Event	48th State-of-the-Art Program on Compound Semiconductors, (SOTAPOCs 48) and the ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications - 213th ECS Meeting - Phoenix, AZ, United States Duration: 18 May 2008 → 22 May 2008

Conference

Conference	48th State-of-the-Art Program on Compound Semiconductors, (SOTAPOCs 48) and the ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications - 213th ECS Meeting
Country	United States
City	Phoenix, AZ
Period	18/05/08 → 22/05/08

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.2913421

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Hemg, T. S., Lau, S. P., & Yu, S. F. (2008). Ferromagnetism in Cu-Doped ZnO films prepared by filtered cathodic vacuum arc technique. In ECS Transactions - State-of-the-Art Program on Compound Semiconductors 48, SOTAPOCS 48 -and- ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications (3 ed., Vol. 13, pp. 143-149) https://doi.org/10.1149/1.2913421

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abstract = "Conductive copper-doped ZnO (ZnO:Cu) films exhibited room temperature ferromagnetism were fabricated by the filtered cathodic vacuum are technique. The electron concentration and conductivity of the samples can be increased from 1016 to 1020 cm-3 and 0.31 to 194 (ω-cm)-1 respectively, using the substrate biasing technique. However, this technique degrades the magnetic ordering of the conductive ZnO:Cu films. The magnetization of the films is not proportional to the increment of carrier concentration, suggesting carrier induce exchange is not directly responsible for magnetic properties. The magnetism of the biased ZnO:Cu is correlated to the crystal orientation, crystal quality and density of Zn interstitial.",

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note = "48th State-of-the-Art Program on Compound Semiconductors, (SOTAPOCs 48) and the ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications - 213th ECS Meeting ; Conference date: 18-05-2008 Through 22-05-2008",

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Hemg, TS, Lau, SP & Yu, SF 2008, Ferromagnetism in Cu-Doped ZnO films prepared by filtered cathodic vacuum arc technique. in ECS Transactions - State-of-the-Art Program on Compound Semiconductors 48, SOTAPOCS 48 -and- ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications. 3 edn, vol. 13, pp. 143-149, 48th State-of-the-Art Program on Compound Semiconductors, (SOTAPOCs 48) and the ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications - 213th ECS Meeting, Phoenix, AZ, United States, 18/05/08. https://doi.org/10.1149/1.2913421

Ferromagnetism in Cu-Doped ZnO films prepared by filtered cathodic vacuum arc technique. / Hemg, T. S.; Lau, Shu Ping ; Yu, Siu Fung.

ECS Transactions - State-of-the-Art Program on Compound Semiconductors 48, SOTAPOCS 48 -and- ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications. Vol. 13 3. ed. 2008. p. 143-149.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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N2 - Conductive copper-doped ZnO (ZnO:Cu) films exhibited room temperature ferromagnetism were fabricated by the filtered cathodic vacuum are technique. The electron concentration and conductivity of the samples can be increased from 1016 to 1020 cm-3 and 0.31 to 194 (ω-cm)-1 respectively, using the substrate biasing technique. However, this technique degrades the magnetic ordering of the conductive ZnO:Cu films. The magnetization of the films is not proportional to the increment of carrier concentration, suggesting carrier induce exchange is not directly responsible for magnetic properties. The magnetism of the biased ZnO:Cu is correlated to the crystal orientation, crystal quality and density of Zn interstitial.

AB - Conductive copper-doped ZnO (ZnO:Cu) films exhibited room temperature ferromagnetism were fabricated by the filtered cathodic vacuum are technique. The electron concentration and conductivity of the samples can be increased from 1016 to 1020 cm-3 and 0.31 to 194 (ω-cm)-1 respectively, using the substrate biasing technique. However, this technique degrades the magnetic ordering of the conductive ZnO:Cu films. The magnetization of the films is not proportional to the increment of carrier concentration, suggesting carrier induce exchange is not directly responsible for magnetic properties. The magnetism of the biased ZnO:Cu is correlated to the crystal orientation, crystal quality and density of Zn interstitial.

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Ferromagnetism in Cu-Doped ZnO films prepared by filtered cathodic vacuum arc technique

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