Ferromagnetism in Cu-Doped ZnO films prepared by filtered cathodic vacuum arc technique

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Abstract

Conductive copper-doped ZnO (ZnO:Cu) films exhibited room temperature ferromagnetism were fabricated by the filtered cathodic vacuum are technique. The electron concentration and conductivity of the samples can be increased from 1016 to 1020 cm-3 and 0.31 to 194 (ω-cm)-1 respectively, using the substrate biasing technique. However, this technique degrades the magnetic ordering of the conductive ZnO:Cu films. The magnetization of the films is not proportional to the increment of carrier concentration, suggesting carrier induce exchange is not directly responsible for magnetic properties. The magnetism of the biased ZnO:Cu is correlated to the crystal orientation, crystal quality and density of Zn interstitial.
Original languageEnglish
Title of host publicationECS Transactions - State-of-the-Art Program on Compound Semiconductors 48, SOTAPOCS 48 -and- ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications
Pages143-149
Number of pages7
Volume13
Edition3
DOIs
Publication statusPublished - 17 Nov 2008
Externally publishedYes
Event48th State-of-the-Art Program on Compound Semiconductors, (SOTAPOCs 48) and the ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications - 213th ECS Meeting - Phoenix, AZ, United States
Duration: 18 May 200822 May 2008

Conference

Conference48th State-of-the-Art Program on Compound Semiconductors, (SOTAPOCs 48) and the ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications - 213th ECS Meeting
CountryUnited States
CityPhoenix, AZ
Period18/05/0822/05/08

ASJC Scopus subject areas

  • Engineering(all)

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