Ferroelectric, piezoelectric, and leakage current properties of (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3thin films grown by pulsed laser deposition

D. Y. Wang; D. M. Lin; Kin Wing Kwok; N. Y. Chan; Jiyan Dai; S. Li; H. L.W. Chan

doi:10.1063/1.3535608

Ferroelectric, piezoelectric, and leakage current properties of (K_0.48Na_0.48Li_0.04)(Nb_0.775Ta_0.225)O₃thin films grown by pulsed laser deposition

D. Y. Wang
, D. M. Lin
, Kin Wing Kwok
, N. Y. Chan
, Jiyan Dai
, S. Li
, H. L.W. Chan

Research output: Journal article publication › Journal article › Academic research › peer-review

40 Citations (Scopus)

Abstract

Lead-free (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3(KNLNT) thin films were deposited on Pt(111)/Ti/SiO2/Si(001) substrates using pulsed laser deposition. The film exhibited a well-defined ferroelectric hysteresis loop with a remnant polarization 2Prof 22.6 μC/cm2and a coercive field Ecof 10.3 kV/mm. The effective piezoelectric coefficient d33, fof the KNLNT thin films was found to be about 49 pm/V by piezoelectric force microscope. The dominant conduction mechanisms of Au/KNLNT/Pt thin film capacitor were determined to be bulk-limited space-charge-limited-current and Poole-Frenkle emission at low and high electric field strengths, respectively, within a measured temperature range of 130-370 K.

Original language	English
Article number	022902
Journal	Applied Physics Letters
Volume	98
Issue number	2
DOIs	https://doi.org/10.1063/1.3535608
Publication status	Published - 10 Jan 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

More information

10.1063/1.3535608

http://hdl.handle.net/10397/4420

Cite this

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title = "Ferroelectric, piezoelectric, and leakage current properties of (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3thin films grown by pulsed laser deposition",

abstract = "Lead-free (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3(KNLNT) thin films were deposited on Pt(111)/Ti/SiO2/Si(001) substrates using pulsed laser deposition. The film exhibited a well-defined ferroelectric hysteresis loop with a remnant polarization 2Prof 22.6 μC/cm2and a coercive field Ecof 10.3 kV/mm. The effective piezoelectric coefficient d33, fof the KNLNT thin films was found to be about 49 pm/V by piezoelectric force microscope. The dominant conduction mechanisms of Au/KNLNT/Pt thin film capacitor were determined to be bulk-limited space-charge-limited-current and Poole-Frenkle emission at low and high electric field strengths, respectively, within a measured temperature range of 130-370 K.",

author = "Wang, \{D. Y.\} and Lin, \{D. M.\} and Kwok, \{Kin Wing\} and Chan, \{N. Y.\} and Jiyan Dai and S. Li and Chan, \{H. L.W.\}",

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doi = "10.1063/1.3535608",

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T1 - Ferroelectric, piezoelectric, and leakage current properties of (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3thin films grown by pulsed laser deposition

AU - Wang, D. Y.

AU - Lin, D. M.

AU - Kwok, Kin Wing

AU - Chan, N. Y.

AU - Dai, Jiyan

AU - Li, S.

AU - Chan, H. L.W.

PY - 2011/1/10

Y1 - 2011/1/10

N2 - Lead-free (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3(KNLNT) thin films were deposited on Pt(111)/Ti/SiO2/Si(001) substrates using pulsed laser deposition. The film exhibited a well-defined ferroelectric hysteresis loop with a remnant polarization 2Prof 22.6 μC/cm2and a coercive field Ecof 10.3 kV/mm. The effective piezoelectric coefficient d33, fof the KNLNT thin films was found to be about 49 pm/V by piezoelectric force microscope. The dominant conduction mechanisms of Au/KNLNT/Pt thin film capacitor were determined to be bulk-limited space-charge-limited-current and Poole-Frenkle emission at low and high electric field strengths, respectively, within a measured temperature range of 130-370 K.

AB - Lead-free (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3(KNLNT) thin films were deposited on Pt(111)/Ti/SiO2/Si(001) substrates using pulsed laser deposition. The film exhibited a well-defined ferroelectric hysteresis loop with a remnant polarization 2Prof 22.6 μC/cm2and a coercive field Ecof 10.3 kV/mm. The effective piezoelectric coefficient d33, fof the KNLNT thin films was found to be about 49 pm/V by piezoelectric force microscope. The dominant conduction mechanisms of Au/KNLNT/Pt thin film capacitor were determined to be bulk-limited space-charge-limited-current and Poole-Frenkle emission at low and high electric field strengths, respectively, within a measured temperature range of 130-370 K.

UR - https://www.scopus.com/pages/publications/78751469038

U2 - 10.1063/1.3535608

DO - 10.1063/1.3535608

M3 - Journal article

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022902

ER -

Ferroelectric, piezoelectric, and leakage current properties of (K_0.48Na_0.48Li_0.04)(Nb_0.775Ta_0.225)O₃thin films grown by pulsed laser deposition

Abstract

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