Ferroelectric, piezoelectric, and leakage current properties of (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3thin films grown by pulsed laser deposition

D. Y. Wang, D. M. Lin, Kin Wing Kwok, N. Y. Chan, Jiyan Dai, S. Li, H. L.W. Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

29 Citations (Scopus)

Abstract

Lead-free (K0.48Na0.48Li0.04)(Nb0.775Ta0.225)O3(KNLNT) thin films were deposited on Pt(111)/Ti/SiO2/Si(001) substrates using pulsed laser deposition. The film exhibited a well-defined ferroelectric hysteresis loop with a remnant polarization 2Prof 22.6 μC/cm2and a coercive field Ecof 10.3 kV/mm. The effective piezoelectric coefficient d33, fof the KNLNT thin films was found to be about 49 pm/V by piezoelectric force microscope. The dominant conduction mechanisms of Au/KNLNT/Pt thin film capacitor were determined to be bulk-limited space-charge-limited-current and Poole-Frenkle emission at low and high electric field strengths, respectively, within a measured temperature range of 130-370 K.
Original languageEnglish
Article number022902
JournalApplied Physics Letters
Volume98
Issue number2
DOIs
Publication statusPublished - 10 Jan 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this