Ferroelectric-induced resistive switching in ultrathin (Ba,Sr)TiO3 tunnel junctions due to strain modulation

Hei Man Yau; Zhongnan Xi; Xinxin Chen; Cheuk Ho Chan; Zheng Wen; Ji Yan Dai

doi:10.1063/1.5024449

Ferroelectric-induced resistive switching in ultrathin (Ba,Sr)TiO₃ tunnel junctions due to strain modulation

Hei Man Yau, Zhongnan Xi, Xinxin Chen, Cheuk Ho Chan, Zheng Wen, Ji Yan Dai

Research output: Journal article publication › Journal article › Academic research › peer-review

9 Citations (Scopus)

Abstract

Through strain modulation to the (Ba_0.8,Sr_0.2)TiO₃ (BST) tunnel junction, giant resistive switching was achieved in a Pt/BST/Nb:SrTiO₃ (Nb:STO) heterostructure, and the role of ferroelectricity in the resistive switching was studied. When an external compressive strain was added to this heterostructure with a ten-unit-cell-thick BST tunnel layer, the resistive switching mechanism was demonstrated to change from thermionic emission to direct tunneling accompanied by the ferroelectricity enhancement to the BST layer. This reveals the role of strain and ferroelectricity in resistive switching which leads to three orders increase in the ON/OFF current ratio for the BST tunnel layer. These encouraging results not only show the potential to enhance ferroelectricity of BST thin film by strain engineering, but also the crucial role of strain engineering in BST tunnel layer-based memory device applications.

Original language	English
Article number	042905
Journal	Applied Physics Letters
Volume	113
Issue number	4
DOIs	https://doi.org/10.1063/1.5024449
Publication status	Published - 23 Jul 2018

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

More information

10.1063/1.5024449

http://hdl.handle.net/10397/78959

Cite this

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title = "Ferroelectric-induced resistive switching in ultrathin (Ba,Sr)TiO3 tunnel junctions due to strain modulation",

abstract = "Through strain modulation to the (Ba0.8,Sr0.2)TiO3 (BST) tunnel junction, giant resistive switching was achieved in a Pt/BST/Nb:SrTiO3 (Nb:STO) heterostructure, and the role of ferroelectricity in the resistive switching was studied. When an external compressive strain was added to this heterostructure with a ten-unit-cell-thick BST tunnel layer, the resistive switching mechanism was demonstrated to change from thermionic emission to direct tunneling accompanied by the ferroelectricity enhancement to the BST layer. This reveals the role of strain and ferroelectricity in resistive switching which leads to three orders increase in the ON/OFF current ratio for the BST tunnel layer. These encouraging results not only show the potential to enhance ferroelectricity of BST thin film by strain engineering, but also the crucial role of strain engineering in BST tunnel layer-based memory device applications.",

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T1 - Ferroelectric-induced resistive switching in ultrathin (Ba,Sr)TiO3 tunnel junctions due to strain modulation

AU - Yau, Hei Man

AU - Xi, Zhongnan

AU - Chen, Xinxin

AU - Chan, Cheuk Ho

AU - Wen, Zheng

AU - Dai, Ji Yan

PY - 2018/7/23

Y1 - 2018/7/23

N2 - Through strain modulation to the (Ba0.8,Sr0.2)TiO3 (BST) tunnel junction, giant resistive switching was achieved in a Pt/BST/Nb:SrTiO3 (Nb:STO) heterostructure, and the role of ferroelectricity in the resistive switching was studied. When an external compressive strain was added to this heterostructure with a ten-unit-cell-thick BST tunnel layer, the resistive switching mechanism was demonstrated to change from thermionic emission to direct tunneling accompanied by the ferroelectricity enhancement to the BST layer. This reveals the role of strain and ferroelectricity in resistive switching which leads to three orders increase in the ON/OFF current ratio for the BST tunnel layer. These encouraging results not only show the potential to enhance ferroelectricity of BST thin film by strain engineering, but also the crucial role of strain engineering in BST tunnel layer-based memory device applications.

AB - Through strain modulation to the (Ba0.8,Sr0.2)TiO3 (BST) tunnel junction, giant resistive switching was achieved in a Pt/BST/Nb:SrTiO3 (Nb:STO) heterostructure, and the role of ferroelectricity in the resistive switching was studied. When an external compressive strain was added to this heterostructure with a ten-unit-cell-thick BST tunnel layer, the resistive switching mechanism was demonstrated to change from thermionic emission to direct tunneling accompanied by the ferroelectricity enhancement to the BST layer. This reveals the role of strain and ferroelectricity in resistive switching which leads to three orders increase in the ON/OFF current ratio for the BST tunnel layer. These encouraging results not only show the potential to enhance ferroelectricity of BST thin film by strain engineering, but also the crucial role of strain engineering in BST tunnel layer-based memory device applications.

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JF - Applied Physics Letters

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Ferroelectric-induced resistive switching in ultrathin (Ba,Sr)TiO₃ tunnel junctions due to strain modulation

Abstract

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