Ferroelectric-Gated Two-Dimensional-Material-Based Electron Devices

Changjian Zhou, Yang Chai

Research output: Journal article publicationReview articleAcademic researchpeer-review

21 Citations (Scopus)

Abstract

KGaA, Weinheim Two-dimensional (2D) materials have the potential to extend state-of-the-art semiconductor technology to sub-nanometer scales and have inspired numerous research efforts exploring novel device structures. The key elements of electron devices, including low-resistance contacts and reliable gate dielectrics, have to be optimized to complete a functional device. This review highlights recent studies on the integration of ferroelectrics with 2D materials to implement 2D electron devices. The high polarization field and ultra-high dielectric constants of ferroelectric materials enable versatile carrier tuning in 2D materials. Various novel device structures and functionalities are enabled with the integration of ferroelectrics and 2D materials. Representative examples, including ferroelectric-gated 2D memory devices, low-power field-effect transistors enabled by high-k ferroelectrics and negative capacitance effect, and optothermal and photoelectronic devices, are reviewed. Current developments and remaining challenges in ferroelectric-gated 2D electron devices are discussed.
Original languageEnglish
Article number1600400
JournalAdvanced Electronic Materials
Volume3
Issue number4
DOIs
Publication statusPublished - 1 Apr 2017

Keywords

  • 2D materials
  • ferroelectrics
  • low-power devices
  • non-volatile memory
  • optoelectronic sensors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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