Abstract
The electronic structures of pure and Nb5+ , La3+ doped ferroelectric PbTiO3 have been calculated with discrete variation X-alpha (DV - X-alpha) embedded cluster method. Based on the relative distribution of partial density of states (PDOS) of Ti4+ , Nb5+ , La3+ , and Pb2+ ions. We could clarify the resistant effect of Nb5+ , La3+ doping on the ferroelectric fatigue in PbTiO3 based material system (PZT).
Original language | English |
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Pages (from-to) | 163-169 |
Number of pages | 7 |
Journal | Ferroelectrics |
Volume | 281 |
DOIs | |
Publication status | Published - 2002 |
Keywords
- Ferroelectric fatigue
- Cluster
- Electronic structure
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics