Fatigue characteristics of SrBi2Ta2O9thin films prepared by metalorganic decomposition

Z. G. Zhang, J. S. Liu, Y. N. Wang, J. S. Zhu, Feng Yan, X. B. Chen, H. M. Shen

Research output: Journal article publicationJournal articleAcademic researchpeer-review

64 Citations (Scopus)

Abstract

Polycrystalline SrBi2Ta2O9(SBT) ferroelectric thin films were synthesized on Pt/Ti/SiO2/Si substrates by metalorganic decomposition. Electric measurements demonstrate that fatigue increases with decreasing switching voltage and frequency, and the suppressed polarization caused at a lower switching voltage can be recovered by switching at a higher voltage. This suggests that the domain walls of SBT thin films are weakly pinned and easily depinned by a higher external field. The polarization of SBT thin films annealed in air shows more degradation than that annealed in oxygen, which indicates that the oxygen vacancy also plays an important role in fatigue behavior of SBT thin films.
Original languageEnglish
Pages (from-to)788-790
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number6
DOIs
Publication statusPublished - 1 Dec 1998
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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