Fast flexible electronics with strained silicon nanomembranes

Han Zhou, Jung Hun Seo, Deborah M. Paskiewicz, Ye Zhu, George K. Celler, Paul M. Voyles, Weidong Zhou, Max G. Lagally, Zhenqiang Ma

Research output: Journal article publicationJournal articleAcademic researchpeer-review

96 Citations (Scopus)

Abstract

Fast flexible electronics operating at radio frequencies (>1 GHz) are more attractive than traditional flexible electronics because of their versatile capabilities, dramatic power savings when operating at reduced speed and broader spectrum of applications. Transferrable single-crystalline Si nanomembranes (SiNMs) are preferred to other materials for flexible electronics owing to their unique advantages. Further improvement of Si-based device speed implies significant technical and economic advantages. While the mobility of bulk Si can be enhanced using strain techniques, implementing these techniques into transferrable single-crystalline SiNMs has been challenging and not demonstrated. The past approach presents severe challenges to achieve effective doping and desired material topology. Here we demonstrate the combination of strained- NM-compatible doping techniques with self-sustained-strain sharing by applying a strain-sharing scheme between Si and SiGe multiple epitaxial layers, to create strained print-transferrable SiNMs. We demonstrate a new speed record of Si-based flexible electronics without using aggressively scaled critical device dimensions.
Original languageEnglish
Article number1291
JournalScientific Reports
Volume3
DOIs
Publication statusPublished - 1 Mar 2013
Externally publishedYes

ASJC Scopus subject areas

  • General

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