Failure mechanism study for high resistance contact in CMOS devices

Jiyan Dai; S. Ansari; C. L. Tay; S. F. Tee; E. Er; S. Redkar

Failure mechanism study for high resistance contact in CMOS devices

Jiyan Dai, S. Ansari, C. L. Tay, S. F. Tee, E. Er, S. Redkar

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

3 Citations (Scopus)

Abstract

A novel failure mechanism of the high resistance contact revealed by TEM study is presented. Direct evidences are provided to show the impact of process changes to the contact structure which may correlate to the high resistance.

Original language	English
Title of host publication	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Pages	130-133
Number of pages	4
Publication status	Published - 1 Jan 2001
Externally published	Yes
Event	8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001) - Singapure, Singapore Duration: 9 Jul 2001 → 13 Jul 2001

Conference

Conference	8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001)
Country	Singapore
City	Singapure
Period	9/07/01 → 13/07/01

ASJC Scopus subject areas

Engineering(all)

Cite this

@inproceedings{f94bab0aa5b74359ae848f25dc04e70e,

title = "Failure mechanism study for high resistance contact in CMOS devices",

abstract = "A novel failure mechanism of the high resistance contact revealed by TEM study is presented. Direct evidences are provided to show the impact of process changes to the contact structure which may correlate to the high resistance.",

author = "Jiyan Dai and S. Ansari and Tay, {C. L.} and Tee, {S. F.} and E. Er and S. Redkar",

year = "2001",

month = jan,

day = "1",

language = "English",

pages = "130--133",

booktitle = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

note = "8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001) ; Conference date: 09-07-2001 Through 13-07-2001",

}

Dai, J, Ansari, S, Tay, CL, Tee, SF, Er, E & Redkar, S 2001, Failure mechanism study for high resistance contact in CMOS devices. in Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. pp. 130-133, 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001), Singapure, Singapore, 9/07/01.

Failure mechanism study for high resistance contact in CMOS devices. / Dai, Jiyan; Ansari, S.; Tay, C. L.; Tee, S. F.; Er, E.; Redkar, S.

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2001. p. 130-133.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Failure mechanism study for high resistance contact in CMOS devices

AU - Dai, Jiyan

AU - Ansari, S.

AU - Tay, C. L.

AU - Tee, S. F.

AU - Er, E.

AU - Redkar, S.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - A novel failure mechanism of the high resistance contact revealed by TEM study is presented. Direct evidences are provided to show the impact of process changes to the contact structure which may correlate to the high resistance.

AB - A novel failure mechanism of the high resistance contact revealed by TEM study is presented. Direct evidences are provided to show the impact of process changes to the contact structure which may correlate to the high resistance.

UR - http://www.scopus.com/inward/record.url?scp=0034818549&partnerID=8YFLogxK

M3 - Conference article published in proceeding or book

SP - 130

EP - 133

BT - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

T2 - 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001)

Y2 - 9 July 2001 through 13 July 2001

ER -

Failure mechanism study for high resistance contact in CMOS devices

Abstract

Conference

ASJC Scopus subject areas

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Cite this