Failure mechanism study for high resistance contact in CMOS devices

Jiyan Dai, S. Ansari, C. L. Tay, S. F. Tee, E. Er, S. Redkar

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

3 Citations (Scopus)

Abstract

A novel failure mechanism of the high resistance contact revealed by TEM study is presented. Direct evidences are provided to show the impact of process changes to the contact structure which may correlate to the high resistance.
Original languageEnglish
Title of host publicationProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Pages130-133
Number of pages4
Publication statusPublished - 1 Jan 2001
Externally publishedYes
Event8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001) - Singapure, Singapore
Duration: 9 Jul 200113 Jul 2001

Conference

Conference8th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2001)
CountrySingapore
CitySingapure
Period9/07/0113/07/01

ASJC Scopus subject areas

  • Engineering(all)

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