Fabrication of sub-100-nm silicon nanowire devices on SOI wafer by CMOS compatible fabrication process

L. N. Sun; Ming Hung Thomas Lee; Z. C. Yang; G. Z. Yan

doi:10.1109/NEMS.2010.5592606

Fabrication of sub-100-nm silicon nanowire devices on SOI wafer by CMOS compatible fabrication process

L. N. Sun, Ming Hung Thomas Lee, Z. C. Yang, G. Z. Yan

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

1 Citation (Scopus)

Abstract

A technique for the fabrication of planar silicon nanowires (SiNWs) on SIMOX-SOI (Separation by Implanted Oxygen-Silicon on Insulator) wafers using sidewall transfer lithography is presented, which can be used as field effect devices for biomolecular detections. Different from the existing synthesis process, this method is based on standard "top-down" semiconductor process. Aluminum sidewall is applied in this work on account of its high etching selectivity over both silicon and oxide, so as to preserve the thin oxide layer of SIMOX-SOI for reliable electrical isolation which is considered crucial to the weak signal detection. Silicon nanowires with the dimensions of 50 nm x 90 nm x 5 μm have been successfully demonstrated by this CMOS compatible fabrication process.

Original language	English
Title of host publication	2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
Pages	971-974
Number of pages	4
DOIs	https://doi.org/10.1109/NEMS.2010.5592606
Publication status	Published - 29 Nov 2010
Event	5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 - Xiamen, China Duration: 20 Jan 2010 → 23 Jan 2010

Conference

Conference	5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
Country/Territory	China
City	Xiamen
Period	20/01/10 → 23/01/10

Keywords

Biomolecular detection
Sidewall transfer lithography
Silicon nanowires (SiNWs)

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

More information

10.1109/NEMS.2010.5592606

Cite this

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abstract = "A technique for the fabrication of planar silicon nanowires (SiNWs) on SIMOX-SOI (Separation by Implanted Oxygen-Silicon on Insulator) wafers using sidewall transfer lithography is presented, which can be used as field effect devices for biomolecular detections. Different from the existing synthesis process, this method is based on standard {"}top-down{"} semiconductor process. Aluminum sidewall is applied in this work on account of its high etching selectivity over both silicon and oxide, so as to preserve the thin oxide layer of SIMOX-SOI for reliable electrical isolation which is considered crucial to the weak signal detection. Silicon nanowires with the dimensions of 50 nm x 90 nm x 5 μm have been successfully demonstrated by this CMOS compatible fabrication process.",

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author = "Sun, {L. N.} and Lee, {Ming Hung Thomas} and Yang, {Z. C.} and Yan, {G. Z.}",

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doi = "10.1109/NEMS.2010.5592606",

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pages = "971--974",

booktitle = "2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010",

note = "5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 ; Conference date: 20-01-2010 Through 23-01-2010",

}

Sun, LN, Lee, MHT, Yang, ZC & Yan, GZ 2010, Fabrication of sub-100-nm silicon nanowire devices on SOI wafer by CMOS compatible fabrication process. in 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010., 5592606, pp. 971-974, 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, Xiamen, China, 20/01/10. https://doi.org/10.1109/NEMS.2010.5592606

Fabrication of sub-100-nm silicon nanowire devices on SOI wafer by CMOS compatible fabrication process. / Sun, L. N.; Lee, Ming Hung Thomas; Yang, Z. C. et al.
2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. 2010. p. 971-974 5592606.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AU - Lee, Ming Hung Thomas

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AB - A technique for the fabrication of planar silicon nanowires (SiNWs) on SIMOX-SOI (Separation by Implanted Oxygen-Silicon on Insulator) wafers using sidewall transfer lithography is presented, which can be used as field effect devices for biomolecular detections. Different from the existing synthesis process, this method is based on standard "top-down" semiconductor process. Aluminum sidewall is applied in this work on account of its high etching selectivity over both silicon and oxide, so as to preserve the thin oxide layer of SIMOX-SOI for reliable electrical isolation which is considered crucial to the weak signal detection. Silicon nanowires with the dimensions of 50 nm x 90 nm x 5 μm have been successfully demonstrated by this CMOS compatible fabrication process.

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Fabrication of sub-100-nm silicon nanowire devices on SOI wafer by CMOS compatible fabrication process

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