Fabrication of sub-100-nm silicon nanowire devices on SOI wafer by CMOS compatible fabrication process

L. N. Sun, Ming Hung Thomas Lee, Z. C. Yang, G. Z. Yan

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

A technique for the fabrication of planar silicon nanowires (SiNWs) on SIMOX-SOI (Separation by Implanted Oxygen-Silicon on Insulator) wafers using sidewall transfer lithography is presented, which can be used as field effect devices for biomolecular detections. Different from the existing synthesis process, this method is based on standard "top-down" semiconductor process. Aluminum sidewall is applied in this work on account of its high etching selectivity over both silicon and oxide, so as to preserve the thin oxide layer of SIMOX-SOI for reliable electrical isolation which is considered crucial to the weak signal detection. Silicon nanowires with the dimensions of 50 nm x 90 nm x 5 μm have been successfully demonstrated by this CMOS compatible fabrication process.
Original languageEnglish
Title of host publication2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
Pages971-974
Number of pages4
DOIs
Publication statusPublished - 29 Nov 2010
Event5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 - Xiamen, China
Duration: 20 Jan 201023 Jan 2010

Conference

Conference5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
Country/TerritoryChina
CityXiamen
Period20/01/1023/01/10

Keywords

  • Biomolecular detection
  • Sidewall transfer lithography
  • Silicon nanowires (SiNWs)

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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