Fabrication of phase-change chalcogenide Ge2Sb 2Te5 patterns by laser-induced forward transfer

M.L. Tseng, B.H. Chen, C.H. Chu, C.M. Chang, W.C. Lin, N.-N. Chu, M. Mansuripur, A.Q. Liu, Din-ping Tsai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

41 Citations (Scopus)


Femtosecond laser pulses are focused on a thin film of Ge 2Sb2Te5 phase-change material, and the transfer of the illuminated material to a nearby substrate is investigated. The size, shape, and phase-state of the fabricated pattern can be effectively controlled by the laser fluence and by the thickness of the Ge2Sb2Te5 film. Results show multi-level electrical and optical reflection states of the fabricated patterns, which may provide a simple and efficient foundation for patterning future phase-change devices. © 2011 Optical Society of America.
Original languageEnglish
Pages (from-to)16975-16984
Number of pages10
JournalOptics Express
Issue number18
Publication statusPublished - 29 Aug 2011
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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