Fabrication of phase-change chalcogenide Ge2Sb 2Te5 patterns by laser-induced forward transfer

M.L. Tseng; B.H. Chen; C.H. Chu; C.M. Chang; W.C. Lin; N.-N. Chu; M. Mansuripur; A.Q. Liu; Din-ping Tsai

doi:10.1364/OE.19.016975

Fabrication of phase-change chalcogenide Ge2Sb 2Te5 patterns by laser-induced forward transfer

M.L. Tseng, B.H. Chen, C.H. Chu, C.M. Chang, W.C. Lin, N.-N. Chu, M. Mansuripur, A.Q. Liu, Din-ping Tsai

Research output: Journal article publication › Journal article › Academic research › peer-review

47 Citations (Scopus)

Abstract

Femtosecond laser pulses are focused on a thin film of Ge 2Sb2Te5 phase-change material, and the transfer of the illuminated material to a nearby substrate is investigated. The size, shape, and phase-state of the fabricated pattern can be effectively controlled by the laser fluence and by the thickness of the Ge2Sb2Te5 film. Results show multi-level electrical and optical reflection states of the fabricated patterns, which may provide a simple and efficient foundation for patterning future phase-change devices. © 2011 Optical Society of America.

Original language	English
Pages (from-to)	16975-16984
Number of pages	10
Journal	Optics Express
Volume	19
Issue number	18
DOIs	https://doi.org/10.1364/OE.19.016975
Publication status	Published - 29 Aug 2011
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

More information

10.1364/OE.19.016975

Cite this

@article{a1fb0d4177054e67882f4f295ae235f8,

title = "Fabrication of phase-change chalcogenide Ge2Sb 2Te5 patterns by laser-induced forward transfer",

abstract = "Femtosecond laser pulses are focused on a thin film of Ge 2Sb2Te5 phase-change material, and the transfer of the illuminated material to a nearby substrate is investigated. The size, shape, and phase-state of the fabricated pattern can be effectively controlled by the laser fluence and by the thickness of the Ge2Sb2Te5 film. Results show multi-level electrical and optical reflection states of the fabricated patterns, which may provide a simple and efficient foundation for patterning future phase-change devices. {\textcopyright} 2011 Optical Society of America.",

author = "M.L. Tseng and B.H. Chen and C.H. Chu and C.M. Chang and W.C. Lin and N.-N. Chu and M. Mansuripur and A.Q. Liu and Din-ping Tsai",

year = "2011",

month = aug,

day = "29",

doi = "10.1364/OE.19.016975",

language = "English",

volume = "19",

pages = "16975--16984",

journal = "Optics Express",

issn = "1094-4087",

publisher = "The Optical Society",

number = "18",

}

TY - JOUR

T1 - Fabrication of phase-change chalcogenide Ge2Sb 2Te5 patterns by laser-induced forward transfer

AU - Tseng, M.L.

AU - Chen, B.H.

AU - Chu, C.H.

AU - Chang, C.M.

AU - Lin, W.C.

AU - Chu, N.-N.

AU - Mansuripur, M.

AU - Liu, A.Q.

AU - Tsai, Din-ping

PY - 2011/8/29

Y1 - 2011/8/29

N2 - Femtosecond laser pulses are focused on a thin film of Ge 2Sb2Te5 phase-change material, and the transfer of the illuminated material to a nearby substrate is investigated. The size, shape, and phase-state of the fabricated pattern can be effectively controlled by the laser fluence and by the thickness of the Ge2Sb2Te5 film. Results show multi-level electrical and optical reflection states of the fabricated patterns, which may provide a simple and efficient foundation for patterning future phase-change devices. © 2011 Optical Society of America.

AB - Femtosecond laser pulses are focused on a thin film of Ge 2Sb2Te5 phase-change material, and the transfer of the illuminated material to a nearby substrate is investigated. The size, shape, and phase-state of the fabricated pattern can be effectively controlled by the laser fluence and by the thickness of the Ge2Sb2Te5 film. Results show multi-level electrical and optical reflection states of the fabricated patterns, which may provide a simple and efficient foundation for patterning future phase-change devices. © 2011 Optical Society of America.

UR - http://www.scopus.com/inward/record.url?scp=80052203824&partnerID=8YFLogxK

U2 - 10.1364/OE.19.016975

DO - 10.1364/OE.19.016975

M3 - Journal article

SN - 1094-4087

VL - 19

SP - 16975

EP - 16984

JO - Optics Express

JF - Optics Express

IS - 18

ER -

Fabrication of phase-change chalcogenide Ge2Sb 2Te5 patterns by laser-induced forward transfer

Abstract

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this