Fabrication of nitrogen-doped multi-walled carbon nanotube and their field effect transistor properties

Xiao Long Zhou, Yang Chai, Ping Jian Li, Guang Hu Pan, Hui Sun, Zi Yong Shen, Qi Feng Zhang, Jin Lei Wu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

3 Citations (Scopus)

Abstract

Multi-walled carbon nanotube (CNT) arrays have been produced on silicon substrate by an one-step route based on the pyrolysis of mixture of ferrocene and melamine under well-chosen synthesis condition. Transmission electron microscope (TEM) and scanning electron microscope (SEM) studies showed the products were all multi-walled CNTs that are about 50 nm in diameter. X-ray photoelectron spectroscopy study revealed that the CNTs were nitrogen-doped. Field effect transistors (FETs) base on the nitrogen-doped MWCNT in an asymmetry-source/drain-electrodes configuration were further fabricated. And electrical transport measurements exhibited typical n-type behavior. The off-state current through the FETs is extremely low, about 100 pA in order. The asymmetry isolation layer between the source/drain electrodes and the gate used in the experiment results in asymmetric modulation of gate electrostatic field to source electrode and drain electrode. Therefore solo gate electrostatic field modulation to the drain electrode is realized.
Original languageEnglish
Pages (from-to)1127-1131
Number of pages5
JournalActa Physico - Chimica Sinica
Volume21
Issue number10
Publication statusPublished - 1 Oct 2005
Externally publishedYes

Keywords

  • Carbon nanotubes
  • Field effect transistor
  • Nitrogen doping
  • Transport

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

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