Fabrication of n-ZnO:Alp-SiC (4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique

Clement Yuen; Siu Fung Yu; Shu Ping Lau; null Rusli; T. P. Chen

doi:10.1063/1.1947889

Fabrication of n-ZnO:Alp-SiC (4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique

Clement Yuen, Siu Fung Yu, Shu Ping Lau, Rusli, T. P. Chen

Research output: Journal article publication › Journal article › Academic research › peer-review

104 Citations (Scopus)

Abstract

We report the low-temperature (∼150 °C) fabrication of n-ZnO:Alp-SiC (4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique. Diodelike rectifying current-voltage characteristics, with turn-on voltage of ∼3.8 V and low reverse leakage current of < 10-2 μA, were measured at room temperature. In addition, ultraviolet emission with peak wavelength of ∼385 nm and full width at half maximum of ∼20 nm are observed at a forward biased voltage of ∼7.4 V. The ultraviolet electroluminescence from the heterojunction is originated from the exciton-exciton scattering inside the n-ZnO:Al film.

Original language	English
Article number	241111
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	24
DOIs	https://doi.org/10.1063/1.1947889
Publication status	Published - 13 Jun 2005
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Fabrication of n-ZnO:Alp-SiC (4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique",

abstract = "We report the low-temperature (∼150 °C) fabrication of n-ZnO:Alp-SiC (4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique. Diodelike rectifying current-voltage characteristics, with turn-on voltage of ∼3.8 V and low reverse leakage current of < 10-2 μA, were measured at room temperature. In addition, ultraviolet emission with peak wavelength of ∼385 nm and full width at half maximum of ∼20 nm are observed at a forward biased voltage of ∼7.4 V. The ultraviolet electroluminescence from the heterojunction is originated from the exciton-exciton scattering inside the n-ZnO:Al film.",

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AU - Yuen, Clement

AU - Yu, Siu Fung

AU - Lau, Shu Ping

AU - Rusli, null

AU - Chen, T. P.

PY - 2005/6/13

Y1 - 2005/6/13

N2 - We report the low-temperature (∼150 °C) fabrication of n-ZnO:Alp-SiC (4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique. Diodelike rectifying current-voltage characteristics, with turn-on voltage of ∼3.8 V and low reverse leakage current of < 10-2 μA, were measured at room temperature. In addition, ultraviolet emission with peak wavelength of ∼385 nm and full width at half maximum of ∼20 nm are observed at a forward biased voltage of ∼7.4 V. The ultraviolet electroluminescence from the heterojunction is originated from the exciton-exciton scattering inside the n-ZnO:Al film.

AB - We report the low-temperature (∼150 °C) fabrication of n-ZnO:Alp-SiC (4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique. Diodelike rectifying current-voltage characteristics, with turn-on voltage of ∼3.8 V and low reverse leakage current of < 10-2 μA, were measured at room temperature. In addition, ultraviolet emission with peak wavelength of ∼385 nm and full width at half maximum of ∼20 nm are observed at a forward biased voltage of ∼7.4 V. The ultraviolet electroluminescence from the heterojunction is originated from the exciton-exciton scattering inside the n-ZnO:Al film.

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DO - 10.1063/1.1947889

M3 - Journal article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

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ER -

Fabrication of n-ZnO:Alp-SiC (4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique

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