Fabrication of n-ZnO:Alp-SiC (4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique

Clement Yuen, Siu Fung Yu, Shu Ping Lau, Rusli, T. P. Chen

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102 Citations (Scopus)

Abstract

We report the low-temperature (∼150 °C) fabrication of n-ZnO:Alp-SiC (4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique. Diodelike rectifying current-voltage characteristics, with turn-on voltage of ∼3.8 V and low reverse leakage current of < 10-2 μA, were measured at room temperature. In addition, ultraviolet emission with peak wavelength of ∼385 nm and full width at half maximum of ∼20 nm are observed at a forward biased voltage of ∼7.4 V. The ultraviolet electroluminescence from the heterojunction is originated from the exciton-exciton scattering inside the n-ZnO:Al film.
Original languageEnglish
Article number241111
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number24
DOIs
Publication statusPublished - 13 Jun 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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