Abstract
We report the low-temperature (∼150 °C) fabrication of n-ZnO:Alp-SiC (4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique. Diodelike rectifying current-voltage characteristics, with turn-on voltage of ∼3.8 V and low reverse leakage current of < 10-2 μA, were measured at room temperature. In addition, ultraviolet emission with peak wavelength of ∼385 nm and full width at half maximum of ∼20 nm are observed at a forward biased voltage of ∼7.4 V. The ultraviolet electroluminescence from the heterojunction is originated from the exciton-exciton scattering inside the n-ZnO:Al film.
Original language | English |
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Article number | 241111 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 24 |
DOIs | |
Publication status | Published - 13 Jun 2005 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)