Gate-all-around transistor (GAT) is demonstrated. The device can be fabricated on either a bulk silicon wafer or on the top of any device layers. The fabrication process used a new technique called metal-induced-lateral-crystallization (MILC) to recrystallize the amorphous silicon to form large silicon grain in the active area. Using this technique, the transistor performance is comparable to a SOI MOSFET. Compared with the single-gate thin film transistor (SGT) and solid phase crystallization (SPC) device, MILC GAT has lower subthreshold slope, lower threshold voltage, higher transconductance and nearly double drive current. The impact of short channel length was investigated.
ASJC Scopus subject areas
- Electrical and Electronic Engineering