Fabrication of diamond film under low methane concentration by hot filament chemical vapor deposition with magnetic field assistance

This study focused on improving diamond film growth through hot filament chemical vapor deposition (HFCVD) with an innovative method, magnetic field assistance. The effects on diamond films were thoroughly investigated using a combination of experiments and simulations. The results of scanning electron microscopy (SEM), Raman spectroscopy, and X-ray diffraction (XRD) all showed significant improvements in nucleation rates, film thickness, and grain size, particularly for grains with (111) orientation, when exposed to a 400 mT magnetic field during HFCVD compared to non-magnetic conditions. Magnetic field application in HFCVD was found to promote the formation of larger diamond grains and increase the film growth rate by nearly 45 %. Concurrent Finite Element Method simulations confirmed that the magnetic field improved reactive gas flow and temperature distribution across the substrate, which was consistent with experimental results. These findings suggest that magnetic field assistance in HFCVD may mitigate the limitations of bias assistance, such as the antenna effect, overheating, and stress imbalance. This approach is especially useful for substrates with complex geometries, such as the sharp edges of cutting tools, as it promotes even film growth.