Using a simple process of the deposition of ZnO thin films on SiOx/Si substrates and subsequent thermal annealing, we fabricated ZnO quantum dots embedded in silicon oxide matrix. The ZnO quantum dots were characterized using transmission electron microscopy and time-integrated photoluminescence. The photoluminescence of the quantum dots show a blue-shift of 47 meV due to the quantum confinement effect.
|Name||Advanced Materials Research|
|Conference||International Conference on Materials for Advanced Technologies, ICMAT 2007|
|Period||1/07/07 → 6/07/07|
- Quantum dots