@inproceedings{71f158e405fe4fa68ea4ed6cfcedf01e,
title = "Fabrication and optical properties of ZnO quantum dots",
abstract = "Using a simple process of the deposition of ZnO thin films on SiOx/Si substrates and subsequent thermal annealing, we fabricated ZnO quantum dots embedded in silicon oxide matrix. The ZnO quantum dots were characterized using transmission electron microscopy and time-integrated photoluminescence. The photoluminescence of the quantum dots show a blue-shift of 47 meV due to the quantum confinement effect.",
keywords = "Photoluminescence, Quantum dots, ZnO",
author = "Zhang, {X. H.} and Chua, {S. J.} and Yong, {A. M.} and Chow, {S. Y.} and Yang, {H. Y.} and Lau, {Shu Ping} and Yu, {Siu Fung} and Sun, {X. W.}",
year = "2008",
month = jan,
day = "1",
doi = "10.4028/0-87849-471-5.71",
language = "English",
isbn = "0878494715",
series = "Advanced Materials Research",
publisher = "Trans Tech Publications",
pages = "71--73",
booktitle = "Semiconductor Photonics",
address = "Germany",
note = "International Conference on Materials for Advanced Technologies, ICMAT 2007 ; Conference date: 01-07-2007 Through 06-07-2007",
}