Fabrication and electrical performance of CVD-grown MoS2 transistor

Ming Wen, J. P. Xu, L. Liu, Xinyuan Zhao, P. T. Lai, W. M. Tang

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

2 Citations (Scopus)

Abstract

A 6-layer continuous and uniform MoS2 film is successfully grown by thermal chemical vapor deposition (CVD) through optimizing its growth conditions, and is used as channel material to fabricate top-gated transistors by conventional lithography process. Also, the effects of a buffer layer on the electrical performance of the CVD MoS2 transistor are investigated, and enhanced carrier mobility (0.69 cm2/V·s) is achieved by using Ta2O5 as the buffer layer.

Original languageEnglish
Title of host publicationEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781538629079
DOIs
Publication statusPublished - 1 Dec 2017
Event13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan
Duration: 18 Oct 201720 Oct 2017

Publication series

NameEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Volume2017-January

Conference

Conference13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
Country/TerritoryTaiwan
CityHsinchu
Period18/10/1720/10/17

Keywords

  • Buffer layer
  • Carrier mobility
  • CVD
  • MoS transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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