Fabrication and electrical performance of CVD-grown MoS2 transistor

Ming Wen; J. P. Xu; L. Liu; Xinyuan Zhao; P. T. Lai; W. M. Tang

doi:10.1109/EDSSC.2017.8126502

Fabrication and electrical performance of CVD-grown MoS₂ transistor

Ming Wen, J. P. Xu, L. Liu, Xinyuan Zhao, P. T. Lai, W. M. Tang

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

2 Citations (Scopus)

Abstract

A 6-layer continuous and uniform MoS₂ film is successfully grown by thermal chemical vapor deposition (CVD) through optimizing its growth conditions, and is used as channel material to fabricate top-gated transistors by conventional lithography process. Also, the effects of a buffer layer on the electrical performance of the CVD MoS₂ transistor are investigated, and enhanced carrier mobility (0.69 cm²/V·s) is achieved by using Ta₂O₅ as the buffer layer.

Original language	English
Title of host publication	EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Number of pages	3
ISBN (Electronic)	9781538629079
DOIs	https://doi.org/10.1109/EDSSC.2017.8126502
Publication status	Published - 1 Dec 2017
Event	13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan Duration: 18 Oct 2017 → 20 Oct 2017

Publication series

Name	EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Volume	2017-January

Conference

Conference	13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
Country/Territory	Taiwan
City	Hsinchu
Period	18/10/17 → 20/10/17

Keywords

Buffer layer
Carrier mobility
CVD
MoS transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

More information

10.1109/EDSSC.2017.8126502

Cite this

Wen, M., Xu, J. P., Liu, L., Zhao, X., Lai, P. T., & Tang, W. M. (2017). Fabrication and electrical performance of CVD-grown MoS₂ transistor. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits (pp. 1-3). (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2017.8126502

@inproceedings{1ff73c2bf84c4cf881b622a178b32f79,

title = "Fabrication and electrical performance of CVD-grown MoS2 transistor",

abstract = "A 6-layer continuous and uniform MoS2 film is successfully grown by thermal chemical vapor deposition (CVD) through optimizing its growth conditions, and is used as channel material to fabricate top-gated transistors by conventional lithography process. Also, the effects of a buffer layer on the electrical performance of the CVD MoS2 transistor are investigated, and enhanced carrier mobility (0.69 cm2/V·s) is achieved by using Ta2O5 as the buffer layer.",

keywords = "Buffer layer, Carrier mobility, CVD, MoS transistor",

author = "Ming Wen and Xu, {J. P.} and L. Liu and Xinyuan Zhao and Lai, {P. T.} and Tang, {W. M.}",

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booktitle = "EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits",

note = "13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 ; Conference date: 18-10-2017 Through 20-10-2017",

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Wen, M, Xu, JP, Liu, L, Zhao, X, Lai, PT & Tang, WM 2017, Fabrication and electrical performance of CVD-grown MoS₂ transistor. in EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017, Hsinchu, Taiwan, 18/10/17. https://doi.org/10.1109/EDSSC.2017.8126502

Fabrication and electrical performance of CVD-grown MoS₂ transistor. / Wen, Ming; Xu, J. P.; Liu, L. et al.
EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-3 (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits; Vol. 2017-January).

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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Wen M, Xu JP, Liu L, Zhao X, Lai PT, Tang WM. Fabrication and electrical performance of CVD-grown MoS₂ transistor. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-3. (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits). doi: 10.1109/EDSSC.2017.8126502