Fabrication and characterization of iridium silicide/silicon Schottky barrier

Jianhua Hao, X. R. Zhao, S. C. Qiou, X. J. Yi

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1 Citation (Scopus)

Abstract

It is demonstrated that an IrSi/Si Schottky barrier can be formed by electron beam evaporation and annealing of Ir films on (100) Si at a temperature of around 450°C. Orientations of (100) and (002) in IrSi are preferred. The barrier height of IrSi/n-Si according to C-V measurements has been found to have a barrier height of 0.91 eV. Measurement of the absorptivity for IrSi indicates that thinner films benefit the infrared radiation absorption when the radiation approaches from the silicon side. An XPS study of IrSi/Si formation was performed. Chemical shift and variation of symmetry in the spectra of Ir, Si core level have been observed. The results suggest that chemical bonding and charge redistribution at the interface will contribute to the silicide Schottky barrier.
Original languageEnglish
Pages (from-to)677-680
Number of pages4
JournalProceedings - Electronic Components and Technology Conference
Volume1
Publication statusPublished - 1 Dec 1990
Externally publishedYes
Event1990 Proceedings of the 40th Electronic Components and Technology Conference - Las Vegas, NV, United States
Duration: 20 May 199023 May 1990

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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