Abstract
We discuss the use of electron-shading effect during the plasma-enhanced chemical vapor deposition to control the growth of carbon nanotubes (CNTs). We designed and fabricated the trench and island test structures. The horizontally aligned CNTs were grown from the sidewall of the polysilicon structure, parallel to the silicon oxide surface. We investigated the electrical property of the CNT number for the interconnect line application. We also studied the scaling effect of the CNT number. This approach provides a method to implement complex CNT structure by in-stiu growth, and integrate them to realize various electricaldevices and interconnect lines.
Original language | English |
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Title of host publication | 2009 Proceedings 59th Electronic Components and Technology Conference, ECTC 2009 |
Pages | 1465-1469 |
Number of pages | 5 |
DOIs | |
Publication status | Published - 12 Oct 2009 |
Externally published | Yes |
Event | 2009 59th Electronic Components and Technology Conference, ECTC 2009 - San Diego, CA, United States Duration: 26 May 2009 → 29 May 2009 |
Conference
Conference | 2009 59th Electronic Components and Technology Conference, ECTC 2009 |
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Country/Territory | United States |
City | San Diego, CA |
Period | 26/05/09 → 29/05/09 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering