Fabrication and Characterization of Epitaxial Gd-Doped SBN Thin Films

Ka Kin Lam; Ka Ho Chan; Sheung Mei Ng; Hon Fai Wong; Yu Kuai Liu; Chi Wah Leung; Chee Leung Mak

doi:10.1002/pssa.201800660

Fabrication and Characterization of Epitaxial Gd-Doped SBN Thin Films

Ka Kin Lam
, Ka Ho Chan
, Sheung Mei Ng
, Hon Fai Wong
, Yu Kuai Liu
, Chi Wah Leung
, Chee Leung Mak

Research output: Journal article publication › Journal article › Academic research › peer-review

3 Citations (Scopus)

Abstract

Gd-doped Sr _0.5 Ba _0.5 Nb ₂ O ₆ (SBN50) thin films with Gd-doping concentration ranging from 1 to 4% are grown on Pt-coated MgO (100) substrates using pulsed laser deposition technique. X-ray diffraction studies show that the films are highly (001)-oriented and epitaxially grown on the substrates. Electrical measurements show that the Gd-SBN films possess good ferroelectric properties. Ramanent polarization of +P _r = 1.36 μC cm ⁻² and −P _r = −5.73 μC cm ⁻² and coercive field of +E _c = 158.0 kV and −E _c = −30.8 kV are obtained.

Original language	English
Article number	1800660
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	216
Issue number	8
DOIs	https://doi.org/10.1002/pssa.201800660
Publication status	Published - 24 Apr 2019

Keywords

ferroelectricity
pulsed laser deposition
Sr Ba Nb O

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

More information

10.1002/pssa.201800660

http://hdl.handle.net/10397/100297

Cite this

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title = "Fabrication and Characterization of Epitaxial Gd-Doped SBN Thin Films",

abstract = " Gd-doped Sr 0.5 Ba 0.5 Nb 2 O 6 (SBN50) thin films with Gd-doping concentration ranging from 1 to 4\% are grown on Pt-coated MgO (100) substrates using pulsed laser deposition technique. X-ray diffraction studies show that the films are highly (001)-oriented and epitaxially grown on the substrates. Electrical measurements show that the Gd-SBN films possess good ferroelectric properties. Ramanent polarization of +P r = 1.36 μC cm −2 and −P r = −5.73 μC cm −2 and coercive field of +E c = 158.0 kV and −E c = −30.8 kV are obtained. ",

keywords = "ferroelectricity, pulsed laser deposition, Sr Ba Nb O",

author = "Lam, \{Ka Kin\} and Chan, \{Ka Ho\} and Ng, \{Sheung Mei\} and Wong, \{Hon Fai\} and Liu, \{Yu Kuai\} and Leung, \{Chi Wah\} and Mak, \{Chee Leung\}",

year = "2019",

month = apr,

day = "24",

doi = "10.1002/pssa.201800660",

language = "English",

volume = "216",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "8",

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TY - JOUR

T1 - Fabrication and Characterization of Epitaxial Gd-Doped SBN Thin Films

AU - Lam, Ka Kin

AU - Chan, Ka Ho

AU - Ng, Sheung Mei

AU - Wong, Hon Fai

AU - Liu, Yu Kuai

AU - Leung, Chi Wah

AU - Mak, Chee Leung

PY - 2019/4/24

Y1 - 2019/4/24

N2 - Gd-doped Sr 0.5 Ba 0.5 Nb 2 O 6 (SBN50) thin films with Gd-doping concentration ranging from 1 to 4% are grown on Pt-coated MgO (100) substrates using pulsed laser deposition technique. X-ray diffraction studies show that the films are highly (001)-oriented and epitaxially grown on the substrates. Electrical measurements show that the Gd-SBN films possess good ferroelectric properties. Ramanent polarization of +P r = 1.36 μC cm −2 and −P r = −5.73 μC cm −2 and coercive field of +E c = 158.0 kV and −E c = −30.8 kV are obtained.

AB - Gd-doped Sr 0.5 Ba 0.5 Nb 2 O 6 (SBN50) thin films with Gd-doping concentration ranging from 1 to 4% are grown on Pt-coated MgO (100) substrates using pulsed laser deposition technique. X-ray diffraction studies show that the films are highly (001)-oriented and epitaxially grown on the substrates. Electrical measurements show that the Gd-SBN films possess good ferroelectric properties. Ramanent polarization of +P r = 1.36 μC cm −2 and −P r = −5.73 μC cm −2 and coercive field of +E c = 158.0 kV and −E c = −30.8 kV are obtained.

KW - ferroelectricity

KW - pulsed laser deposition

KW - Sr Ba Nb O

UR - https://www.scopus.com/pages/publications/85059251109

U2 - 10.1002/pssa.201800660

DO - 10.1002/pssa.201800660

M3 - Journal article

AN - SCOPUS:85059251109

SN - 1862-6300

VL - 216

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 8

M1 - 1800660

ER -

Fabrication and Characterization of Epitaxial Gd-Doped SBN Thin Films

Abstract

Keywords

ASJC Scopus subject areas

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