Abstract
We report the study of extended nanoripple structures formed during the interaction of high-intensity 3.5 fs pulses with a moving silicon wafer. The optimization of laser intensity (8×1013W cm-2) and sample moving velocity (1 mm s-1) allowed the formation of long strips (∼5 mm) of homogeneous nanoripples along the whole area of laser ablation. The comparison of nanoripples produced on the silicon surfaces by few- and multi-cycle pulses is presented. We find that few-cycle pulses produce sharp and more homogenous structures than multi-cycle pulses.
Original language | English |
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Pages (from-to) | 457-462 |
Number of pages | 6 |
Journal | Applied Physics A: Materials Science and Processing |
Volume | 112 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1 Aug 2013 |
ASJC Scopus subject areas
- General Chemistry
- General Materials Science