We report the study of extended nanoripple structures formed during the interaction of high-intensity 3.5 fs pulses with a moving silicon wafer. The optimization of laser intensity (8×1013W cm-2) and sample moving velocity (1 mm s-1) allowed the formation of long strips (∼5 mm) of homogeneous nanoripples along the whole area of laser ablation. The comparison of nanoripples produced on the silicon surfaces by few- and multi-cycle pulses is presented. We find that few-cycle pulses produce sharp and more homogenous structures than multi-cycle pulses.
|Number of pages||6|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 1 Aug 2013|
ASJC Scopus subject areas
- Materials Science(all)