Extended homogeneous nanoripple formation during interaction of high-intensity few-cycle pulses with a moving silicon wafer

R. A. Ganeev, Dangyuan Lei, C. Hutchison, T. Witting, F. Frank, W. A. Okell, T. R. Roschuk, S. A. Maier, J. W.G. Tisch, J. P. Marangos

Research output: Journal article publicationJournal articleAcademic researchpeer-review

7 Citations (Scopus)


We report the study of extended nanoripple structures formed during the interaction of high-intensity 3.5 fs pulses with a moving silicon wafer. The optimization of laser intensity (8×1013W cm-2) and sample moving velocity (1 mm s-1) allowed the formation of long strips (∼5 mm) of homogeneous nanoripples along the whole area of laser ablation. The comparison of nanoripples produced on the silicon surfaces by few- and multi-cycle pulses is presented. We find that few-cycle pulses produce sharp and more homogenous structures than multi-cycle pulses.
Original languageEnglish
Pages (from-to)457-462
Number of pages6
JournalApplied Physics A: Materials Science and Processing
Issue number2
Publication statusPublished - 1 Aug 2013

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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