Experimental study on the electrical characteristic of a GaN hybrid drain-embedded gate injection transistor (HD-GIT)

Y. C. Fong, K. W.E. Cheng

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

The hybrid drain-embedded gate injection transistor (HD-GIT) is a well-developed structure of GaN-based power transistor which solves the issues of current collapse and negative gate threshold voltage. In this paper, the electrical characteristic of a HD-GIT-based GaN power transistor is investigated with experimental study. Based on the gate I-V relationship, the design of the gate driver circuit is discussed. The gate driving losses as well as the switching waveforms of the HD-GIT under hard-switching operations are analyzed. Besides speeding up the switching operation, the reduction in the gate voltage and gate charge saves the gate driving power. These features substantially increase the maximum operating frequency of the HD-GIT-based power converter. The current collapse free operation allows the device working at a wide range of voltage and duty cycle without notable degradation of the dynamic on-state resistance.

Original languageEnglish
Title of host publication2017 7th International Conference on Power Electronics Systems and Applications - Smart Mobility, Power Transfer and Security, PESA 2017
EditorsK.W. Eric Cheng
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-6
Number of pages6
ISBN (Electronic)9781538613863
DOIs
Publication statusPublished - 31 Jan 2018
Event7th International Conference on Power Electronics Systems and Applications - Smart Mobility, Power Transfer and Security, PESA 2017 - Hong Kong, Hong Kong
Duration: 12 Dec 201714 Dec 2017

Publication series

Name2017 7th International Conference on Power Electronics Systems and Applications - Smart Mobility, Power Transfer and Security, PESA 2017
Volume2018-January

Conference

Conference7th International Conference on Power Electronics Systems and Applications - Smart Mobility, Power Transfer and Security, PESA 2017
Country/TerritoryHong Kong
CityHong Kong
Period12/12/1714/12/17

Keywords

  • Gallium Nitride (GaN)
  • high-electron-mobility transistor (HEMT)

ASJC Scopus subject areas

  • Artificial Intelligence
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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