Experimental and Theoretical Studies of /–V Characteristics of Zinc-Doped Silicon p-n Junctions Using the Exact DC Circuit Model

Philip Ching Ho Chan; Chih Tang Sah

doi:10.1109/T-ED.1979.19521

Experimental and Theoretical Studies of /–V Characteristics of Zinc-Doped Silicon p-n Junctions Using the Exact DC Circuit Model

Philip Ching Ho Chan
, Chih Tang Sah

Research output: Journal article publication › Journal article › Academic research › peer-review

8 Citations (Scopus)

Abstract

The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zincdoped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forward I- V characteristics are compared with experimental I-V over a wide range of temperatures, showing excellent agreement.

Original language	English
Pages (from-to)	937-941
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	26
Issue number	6
DOIs	https://doi.org/10.1109/T-ED.1979.19521
Publication status	Published - 1 Jan 1979
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1979.19521

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abstract = "The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zincdoped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forward I- V characteristics are compared with experimental I-V over a wide range of temperatures, showing excellent agreement.",

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N2 - The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zincdoped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forward I- V characteristics are compared with experimental I-V over a wide range of temperatures, showing excellent agreement.

AB - The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zincdoped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forward I- V characteristics are compared with experimental I-V over a wide range of temperatures, showing excellent agreement.

UR - https://www.scopus.com/pages/publications/0018478794

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DO - 10.1109/T-ED.1979.19521

M3 - Journal article

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

Experimental and Theoretical Studies of /–V Characteristics of Zinc-Doped Silicon p-n Junctions Using the Exact DC Circuit Model

Abstract

ASJC Scopus subject areas

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