Experimental and Theoretical Studies of /–V Characteristics of Zinc-Doped Silicon p-n Junctions Using the Exact DC Circuit Model

Philip Ching Ho Chan; Chih Tang Sah

doi:10.1109/T-ED.1979.19521

Experimental and Theoretical Studies of /–V Characteristics of Zinc-Doped Silicon p-n Junctions Using the Exact DC Circuit Model

Philip Ching Ho Chan, Chih Tang Sah

Research output: Journal article publication › Journal article › Academic research › peer-review

8 Citations (Scopus)

Abstract

The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zincdoped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forward I- V characteristics are compared with experimental I-V over a wide range of temperatures, showing excellent agreement.

Original language	English
Pages (from-to)	937-941
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	26
Issue number	6
DOIs	https://doi.org/10.1109/T-ED.1979.19521
Publication status	Published - 1 Jan 1979
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

More information

10.1109/T-ED.1979.19521

Cite this

@article{c583bf72e3bc42bc96894a97ed55613b,

title = "Experimental and Theoretical Studies of /–V Characteristics of Zinc-Doped Silicon p-n Junctions Using the Exact DC Circuit Model",

abstract = "The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zincdoped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forward I- V characteristics are compared with experimental I-V over a wide range of temperatures, showing excellent agreement.",

author = "Chan, {Philip Ching Ho} and Sah, {Chih Tang}",

year = "1979",

month = jan,

day = "1",

doi = "10.1109/T-ED.1979.19521",

language = "English",

volume = "26",

pages = "937--941",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "6",

}

TY - JOUR

T1 - Experimental and Theoretical Studies of /–V Characteristics of Zinc-Doped Silicon p-n Junctions Using the Exact DC Circuit Model

AU - Chan, Philip Ching Ho

AU - Sah, Chih Tang

PY - 1979/1/1

Y1 - 1979/1/1

N2 - The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zincdoped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forward I- V characteristics are compared with experimental I-V over a wide range of temperatures, showing excellent agreement.

AB - The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zincdoped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forward I- V characteristics are compared with experimental I-V over a wide range of temperatures, showing excellent agreement.

UR - http://www.scopus.com/inward/record.url?scp=0018478794&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1979.19521

DO - 10.1109/T-ED.1979.19521

M3 - Journal article

SN - 0018-9383

VL - 26

SP - 937

EP - 941

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Experimental and Theoretical Studies of /–V Characteristics of Zinc-Doped Silicon p-n Junctions Using the Exact DC Circuit Model

Abstract

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this