Experimental and Theoretical Studies of /–V Characteristics of Zinc-Doped Silicon p-n Junctions Using the Exact DC Circuit Model

Philip Ching Ho Chan, Chih Tang Sah

Research output: Journal article publicationJournal articleAcademic researchpeer-review

8 Citations (Scopus)

Abstract

The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zincdoped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forward I- V characteristics are compared with experimental I-V over a wide range of temperatures, showing excellent agreement.
Original languageEnglish
Pages (from-to)937-941
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume26
Issue number6
DOIs
Publication statusPublished - 1 Jan 1979
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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