The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zincdoped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forward I- V characteristics are compared with experimental I-V over a wide range of temperatures, showing excellent agreement.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering