Exciton related stimulated emission in ZnO polycrystalline thin film deposited by filtered cathodic vacuum arc technique

X. H. Zhang; S. J. Chua; A. M. Yong; H. D. Li; Siu Fung Yu; Shu Ping Lau

doi:10.1063/1.2202728

Exciton related stimulated emission in ZnO polycrystalline thin film deposited by filtered cathodic vacuum arc technique

X. H. Zhang, S. J. Chua, A. M. Yong, H. D. Li, Siu Fung Yu, Shu Ping Lau

Research output: Journal article publication › Journal article › Academic research › peer-review

17 Citations (Scopus)

Abstract

Random lasing was observed from ZnO polycrystalline thin film deposited by filtered cathodic vacuum arc technique. It is found that the random lasing action results from exciton-exciton scattering process when the excitation intensity is low. However, with increasing excitation intensity, the well-resolved discrete lasing modes evolve into broad stimulated emission band due to electron-hole plasma formation when the photogenerated exciton density exceeds the Mott density. The short spontaneous emission decay time measured at low temperature suggests that the radiative recombination rate is enhanced by the nanosized ZnO grains in the polycrystalline film through exciton-light coupling.

Original language	English
Article number	191112
Journal	Applied Physics Letters
Volume	88
Issue number	19
DOIs	https://doi.org/10.1063/1.2202728
Publication status	Published - 23 May 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2202728

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title = "Exciton related stimulated emission in ZnO polycrystalline thin film deposited by filtered cathodic vacuum arc technique",

abstract = "Random lasing was observed from ZnO polycrystalline thin film deposited by filtered cathodic vacuum arc technique. It is found that the random lasing action results from exciton-exciton scattering process when the excitation intensity is low. However, with increasing excitation intensity, the well-resolved discrete lasing modes evolve into broad stimulated emission band due to electron-hole plasma formation when the photogenerated exciton density exceeds the Mott density. The short spontaneous emission decay time measured at low temperature suggests that the radiative recombination rate is enhanced by the nanosized ZnO grains in the polycrystalline film through exciton-light coupling.",

author = "Zhang, {X. H.} and Chua, {S. J.} and Yong, {A. M.} and Li, {H. D.} and Yu, {Siu Fung} and Lau, {Shu Ping}",

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T1 - Exciton related stimulated emission in ZnO polycrystalline thin film deposited by filtered cathodic vacuum arc technique

AU - Zhang, X. H.

AU - Chua, S. J.

AU - Yong, A. M.

AU - Li, H. D.

AU - Yu, Siu Fung

AU - Lau, Shu Ping

PY - 2006/5/23

Y1 - 2006/5/23

N2 - Random lasing was observed from ZnO polycrystalline thin film deposited by filtered cathodic vacuum arc technique. It is found that the random lasing action results from exciton-exciton scattering process when the excitation intensity is low. However, with increasing excitation intensity, the well-resolved discrete lasing modes evolve into broad stimulated emission band due to electron-hole plasma formation when the photogenerated exciton density exceeds the Mott density. The short spontaneous emission decay time measured at low temperature suggests that the radiative recombination rate is enhanced by the nanosized ZnO grains in the polycrystalline film through exciton-light coupling.

AB - Random lasing was observed from ZnO polycrystalline thin film deposited by filtered cathodic vacuum arc technique. It is found that the random lasing action results from exciton-exciton scattering process when the excitation intensity is low. However, with increasing excitation intensity, the well-resolved discrete lasing modes evolve into broad stimulated emission band due to electron-hole plasma formation when the photogenerated exciton density exceeds the Mott density. The short spontaneous emission decay time measured at low temperature suggests that the radiative recombination rate is enhanced by the nanosized ZnO grains in the polycrystalline film through exciton-light coupling.

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U2 - 10.1063/1.2202728

DO - 10.1063/1.2202728

M3 - Journal article

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 191112

ER -

Exciton related stimulated emission in ZnO polycrystalline thin film deposited by filtered cathodic vacuum arc technique

Abstract

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