Exciton radiative lifetime in ZnO quantum dots embedded in SiOxmatrix

X. H. Zhang, S. J. Chua, A. M. Yong, S. Y. Chow, H. Y. Yang, Shu Ping Lau, Siu Fung Yu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

33 Citations (Scopus)


Using a simple process of the deposition of ZnO thin films on Si Ox Si substrates and subsequent thermal annealing, we fabricated ZnO quantum dots embedded in silicon oxide matrix. The ZnO quantum dots were characterized using transmission electron microscopy, and time-integrated and time-resolved photoluminescences. We measured an exciton radiative lifetime of 65 ps at 4.3 K, which is much shorter than the exciton radiative lifetime of 322 ps in bulk ZnO. The short exciton radiative lifetime can be explained in terms of exciton superradiance.
Original languageEnglish
Article number221903
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 29 May 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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