Exciton radiative lifetime in ZnO quantum dots embedded in SiOxmatrix

X. H. Zhang; S. J. Chua; A. M. Yong; S. Y. Chow; H. Y. Yang; Shu Ping Lau; Siu Fung Yu

doi:10.1063/1.2207848

Exciton radiative lifetime in ZnO quantum dots embedded in SiO_xmatrix

X. H. Zhang, S. J. Chua, A. M. Yong, S. Y. Chow, H. Y. Yang, Shu Ping Lau, Siu Fung Yu

Research output: Journal article publication › Journal article › Academic research › peer-review

34 Citations (Scopus)

Abstract

Using a simple process of the deposition of ZnO thin films on Si Ox Si substrates and subsequent thermal annealing, we fabricated ZnO quantum dots embedded in silicon oxide matrix. The ZnO quantum dots were characterized using transmission electron microscopy, and time-integrated and time-resolved photoluminescences. We measured an exciton radiative lifetime of 65 ps at 4.3 K, which is much shorter than the exciton radiative lifetime of 322 ps in bulk ZnO. The short exciton radiative lifetime can be explained in terms of exciton superradiance.

Original language	English
Article number	221903
Journal	Applied Physics Letters
Volume	88
Issue number	22
DOIs	https://doi.org/10.1063/1.2207848
Publication status	Published - 29 May 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2207848

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abstract = "Using a simple process of the deposition of ZnO thin films on Si Ox Si substrates and subsequent thermal annealing, we fabricated ZnO quantum dots embedded in silicon oxide matrix. The ZnO quantum dots were characterized using transmission electron microscopy, and time-integrated and time-resolved photoluminescences. We measured an exciton radiative lifetime of 65 ps at 4.3 K, which is much shorter than the exciton radiative lifetime of 322 ps in bulk ZnO. The short exciton radiative lifetime can be explained in terms of exciton superradiance.",

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AU - Chua, S. J.

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AU - Yang, H. Y.

AU - Lau, Shu Ping

AU - Yu, Siu Fung

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Y1 - 2006/5/29

N2 - Using a simple process of the deposition of ZnO thin films on Si Ox Si substrates and subsequent thermal annealing, we fabricated ZnO quantum dots embedded in silicon oxide matrix. The ZnO quantum dots were characterized using transmission electron microscopy, and time-integrated and time-resolved photoluminescences. We measured an exciton radiative lifetime of 65 ps at 4.3 K, which is much shorter than the exciton radiative lifetime of 322 ps in bulk ZnO. The short exciton radiative lifetime can be explained in terms of exciton superradiance.

AB - Using a simple process of the deposition of ZnO thin films on Si Ox Si substrates and subsequent thermal annealing, we fabricated ZnO quantum dots embedded in silicon oxide matrix. The ZnO quantum dots were characterized using transmission electron microscopy, and time-integrated and time-resolved photoluminescences. We measured an exciton radiative lifetime of 65 ps at 4.3 K, which is much shorter than the exciton radiative lifetime of 322 ps in bulk ZnO. The short exciton radiative lifetime can be explained in terms of exciton superradiance.

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Exciton radiative lifetime in ZnO quantum dots embedded in SiO_xmatrix

Abstract

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