Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

X. Li; Chi Wah Leung; C. C. Chiu; K. W. Lin; Mansun Chan; Y. Zhou; Philip W.T. Pong

doi:10.1016/j.physleta.2017.06.010

Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

X. Li, Chi Wah Leung, C. C. Chiu, K. W. Lin, Mansun Chan, Y. Zhou, Philip W.T. Pong

Research output: Journal article publication › Journal article › Academic research › peer-review

7 Citations (Scopus)

Abstract

Exchange-coupled bilayers are widely used as pinned layers in nanometric spintronic devices. In this work, sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays were patterned by nanosphere lithography. The exchange bias (Hex) and coercivity (Hc) of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. Magnetic field annealing results in changed crystallinity, surface roughness, and magnetic properties. Reduced Hcand enhanced Hexare observed after annealing at low temperatures, while high-temperature annealing results in higher Hcand lower Hex. This work provides physical insights on the magnetization reversal response in nanosized spintronic devices involving CoFeB/IrMn reference layers.

Original language	English
Pages (from-to)	2709-2714
Number of pages	6
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	381
Issue number	33
DOIs	https://doi.org/10.1016/j.physleta.2017.06.010
Publication status	Published - 5 Sept 2017

Keywords

Exchange bias
Nanosphere lithography
Nanostructures

ASJC Scopus subject areas

General Physics and Astronomy

More information

10.1016/j.physleta.2017.06.010

http://hdl.handle.net/10397/100390

Cite this

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title = "Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography",

abstract = "Exchange-coupled bilayers are widely used as pinned layers in nanometric spintronic devices. In this work, sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays were patterned by nanosphere lithography. The exchange bias (Hex) and coercivity (Hc) of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. Magnetic field annealing results in changed crystallinity, surface roughness, and magnetic properties. Reduced Hcand enhanced Hexare observed after annealing at low temperatures, while high-temperature annealing results in higher Hcand lower Hex. This work provides physical insights on the magnetization reversal response in nanosized spintronic devices involving CoFeB/IrMn reference layers.",

keywords = "Exchange bias, Nanosphere lithography, Nanostructures",

author = "X. Li and Leung, {Chi Wah} and Chiu, {C. C.} and Lin, {K. W.} and Mansun Chan and Y. Zhou and Pong, {Philip W.T.}",

year = "2017",

month = sep,

day = "5",

doi = "10.1016/j.physleta.2017.06.010",

language = "English",

volume = "381",

pages = "2709--2714",

journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

issn = "0375-9601",

publisher = "Elsevier B.V.",

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}

Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography. / Li, X.; Leung, Chi Wah; Chiu, C. C. et al.
In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 381, No. 33, 05.09.2017, p. 2709-2714.

Research output: Journal article publication › Journal article › Academic research › peer-review

TY - JOUR

T1 - Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

AU - Li, X.

AU - Leung, Chi Wah

AU - Chiu, C. C.

AU - Lin, K. W.

AU - Chan, Mansun

AU - Zhou, Y.

AU - Pong, Philip W.T.

PY - 2017/9/5

Y1 - 2017/9/5

N2 - Exchange-coupled bilayers are widely used as pinned layers in nanometric spintronic devices. In this work, sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays were patterned by nanosphere lithography. The exchange bias (Hex) and coercivity (Hc) of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. Magnetic field annealing results in changed crystallinity, surface roughness, and magnetic properties. Reduced Hcand enhanced Hexare observed after annealing at low temperatures, while high-temperature annealing results in higher Hcand lower Hex. This work provides physical insights on the magnetization reversal response in nanosized spintronic devices involving CoFeB/IrMn reference layers.

AB - Exchange-coupled bilayers are widely used as pinned layers in nanometric spintronic devices. In this work, sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays were patterned by nanosphere lithography. The exchange bias (Hex) and coercivity (Hc) of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. Magnetic field annealing results in changed crystallinity, surface roughness, and magnetic properties. Reduced Hcand enhanced Hexare observed after annealing at low temperatures, while high-temperature annealing results in higher Hcand lower Hex. This work provides physical insights on the magnetization reversal response in nanosized spintronic devices involving CoFeB/IrMn reference layers.

KW - Exchange bias

KW - Nanosphere lithography

KW - Nanostructures

UR - http://www.scopus.com/inward/record.url?scp=85020877188&partnerID=8YFLogxK

U2 - 10.1016/j.physleta.2017.06.010

DO - 10.1016/j.physleta.2017.06.010

M3 - Journal article

SN - 0375-9601

VL - 381

SP - 2709

EP - 2714

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

IS - 33

ER -

Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

Abstract

Keywords

ASJC Scopus subject areas

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