Exchange-coupled bilayers are widely used as pinned layers in nanometric spintronic devices. In this work, sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays were patterned by nanosphere lithography. The exchange bias (Hex) and coercivity (Hc) of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. Magnetic field annealing results in changed crystallinity, surface roughness, and magnetic properties. Reduced Hcand enhanced Hexare observed after annealing at low temperatures, while high-temperature annealing results in higher Hcand lower Hex. This work provides physical insights on the magnetization reversal response in nanosized spintronic devices involving CoFeB/IrMn reference layers.
|Number of pages||6|
|Journal||Physics Letters, Section A: General, Atomic and Solid State Physics|
|Publication status||Published - 5 Sep 2017|
- Exchange bias
- Nanosphere lithography
ASJC Scopus subject areas
- Physics and Astronomy(all)