Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

X. Li, Chi Wah Leung, C. C. Chiu, K. W. Lin, Mansun Chan, Y. Zhou, Philip W.T. Pong

Research output: Journal article publicationJournal articleAcademic researchpeer-review

4 Citations (Scopus)


Exchange-coupled bilayers are widely used as pinned layers in nanometric spintronic devices. In this work, sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays were patterned by nanosphere lithography. The exchange bias (Hex) and coercivity (Hc) of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. Magnetic field annealing results in changed crystallinity, surface roughness, and magnetic properties. Reduced Hcand enhanced Hexare observed after annealing at low temperatures, while high-temperature annealing results in higher Hcand lower Hex. This work provides physical insights on the magnetization reversal response in nanosized spintronic devices involving CoFeB/IrMn reference layers.
Original languageEnglish
Pages (from-to)2709-2714
Number of pages6
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Issue number33
Publication statusPublished - 5 Sep 2017


  • Exchange bias
  • Nanosphere lithography
  • Nanostructures

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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