Abstract
Exchange bias effect in nanostructures are widely investigated for applications in nanometric spintronic sensors. In this work, nanosphere lithography was adopted to pattern CoFeB/IrMn antidot and nanodot arrays. The exchange bias and coercivity of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. High temperature annealing results in decreased exchange bias and coercivity. This work provides physical insights on magnetization reversal response in nanosized spintronic devices.
Original language | English |
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Title of host publication | 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 |
Publisher | IEEE |
ISBN (Electronic) | 9781509024391 |
DOIs | |
Publication status | Published - 12 Aug 2016 |
Event | 5th International Symposium on Next-Generation Electronics, ISNE 2016 - Hsinchu, Taiwan Duration: 4 May 2016 → 6 May 2016 |
Conference
Conference | 5th International Symposium on Next-Generation Electronics, ISNE 2016 |
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Country/Territory | Taiwan |
City | Hsinchu |
Period | 4/05/16 → 6/05/16 |
Keywords
- exchange bias
- nanosphere lithography
- nanostructures
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials