Exchange bias study of CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography

X. Li, Chi Wah Leung, K. W. Lin, M. S. Chan, P. W.T. Pong

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Exchange bias effect in nanostructures are widely investigated for applications in nanometric spintronic sensors. In this work, nanosphere lithography was adopted to pattern CoFeB/IrMn antidot and nanodot arrays. The exchange bias and coercivity of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. High temperature annealing results in decreased exchange bias and coercivity. This work provides physical insights on magnetization reversal response in nanosized spintronic devices.
Original languageEnglish
Title of host publication2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
PublisherIEEE
ISBN (Electronic)9781509024391
DOIs
Publication statusPublished - 12 Aug 2016
Event5th International Symposium on Next-Generation Electronics, ISNE 2016 - Hsinchu, Taiwan
Duration: 4 May 20166 May 2016

Conference

Conference5th International Symposium on Next-Generation Electronics, ISNE 2016
Country/TerritoryTaiwan
CityHsinchu
Period4/05/166/05/16

Keywords

  • exchange bias
  • nanosphere lithography
  • nanostructures

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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