Evaluation of connectivity, flux pinning, and upper critical field contributions to the critical current density of bulk pure and SiC-alloyed MgB2

A. Matsumoto, H. Kumakura, H. Kitaguchi, B. J. Senkowicz, M. C. Jewell, E. E. Hellstrom, Ye Zhu, P. M. Voyles, D. C. Larbalestier

Research output: Journal article publicationJournal articleAcademic researchpeer-review

126 Citations (Scopus)

Abstract

Measurement of critical current density Jc, normal state resistivity ρn, and upper critical field Hc2on pure and 10% SiC-doped MgB2bulks show systematic enhancement of Hc2by SiC addition and by lowering reaction temperature. Hc2(10 K) exceeds 33 T, while the extrapolated zero temperature value exceeds 40 T. The Rowell [Supercond. Sci. Technol. 16, R17 (2003)] analysis suggests that only 8%-17% of the MgB2cross section actually carries current. Higher reaction temperature enhances the connectivity but degrades Hc2and flux pinning, making the measured Jca complex balance between connectivity, Hc2, and flux pinning induced by grain boundaries and precipitates.
Original languageEnglish
Article number132508
JournalApplied Physics Letters
Volume89
Issue number13
DOIs
Publication statusPublished - 6 Oct 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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