Epitaxial Pb(Zr0.52Ti0.48)O3/La0.35Nd0.35Sr0.3MnO3heterostructures for fabrication of ferroelectric field-effect transistor

Wenbin Wu, K. H. Wong, Chee Leung Mak, C. L. Choy, Y. H. Zhang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

31 Citations (Scopus)


Epitaxial La0.35Nd0.35Sr0.3MnO3(LNSMO) thin films and Pb(Zr0.52Ti0.48)O3(PZT)/LNSMO heterostructures have been grown on LaAlO3(001) substrates by the pulsed laser deposition method. The oxygen concentration in the LNSMO films is quite sensitive to the deposition oxygen pressure and can be controlled during the fabrication process. It is, however, stable against in situ postdeposition thermal treatments. Consequently, the resistivity and the metal-semiconductor transition temperature of the LNSMO films can be tuned and fixed during film growth. Electrical measurements on the Pt/PZT/LNSMO ferroelectric capacitor show a remnant polarization of ∼35 μC/cm2and a coercive field of 30-40 kV/cm at low driving voltages. Switching endurance tests suggest no polarization loss up to about 1010bipolar switching cycles. The advantages of using epitaxial LNSMO films as the semiconducting channel in an all-perovskite ferroelectric field-effect transistor are discussed.
Original languageEnglish
Pages (from-to)2068-2071
Number of pages4
JournalJournal of Applied Physics
Issue number4
Publication statusPublished - 15 Aug 2000

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'Epitaxial Pb(Zr0.52Ti0.48)O3/La0.35Nd0.35Sr0.3MnO3heterostructures for fabrication of ferroelectric field-effect transistor'. Together they form a unique fingerprint.

Cite this