Epitaxial Pb(Zr0.52Ti0.48)O3/La0.35Nd0.35Sr0.3MnO3heterostructures for fabrication of ferroelectric field-effect transistor

Wenbin Wu; K. H. Wong; Chee Leung Mak; C. L. Choy; Y. H. Zhang

doi:10.1063/1.1305859

Epitaxial Pb(Zr_0.52Ti_0.48)O₃/La_0.35Nd_0.35Sr_0.3MnO₃heterostructures for fabrication of ferroelectric field-effect transistor

Wenbin Wu, K. H. Wong, Chee Leung Mak, C. L. Choy, Y. H. Zhang

Research output: Journal article publication › Journal article › Academic research › peer-review

31 Citations (Scopus)

Abstract

Epitaxial La0.35Nd0.35Sr0.3MnO3(LNSMO) thin films and Pb(Zr0.52Ti0.48)O3(PZT)/LNSMO heterostructures have been grown on LaAlO3(001) substrates by the pulsed laser deposition method. The oxygen concentration in the LNSMO films is quite sensitive to the deposition oxygen pressure and can be controlled during the fabrication process. It is, however, stable against in situ postdeposition thermal treatments. Consequently, the resistivity and the metal-semiconductor transition temperature of the LNSMO films can be tuned and fixed during film growth. Electrical measurements on the Pt/PZT/LNSMO ferroelectric capacitor show a remnant polarization of ∼35 μC/cm2and a coercive field of 30-40 kV/cm at low driving voltages. Switching endurance tests suggest no polarization loss up to about 1010bipolar switching cycles. The advantages of using epitaxial LNSMO films as the semiconducting channel in an all-perovskite ferroelectric field-effect transistor are discussed.

Original language	English
Pages (from-to)	2068-2071
Number of pages	4
Journal	Journal of Applied Physics
Volume	88
Issue number	4
DOIs	https://doi.org/10.1063/1.1305859
Publication status	Published - 15 Aug 2000

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1305859

http://hdl.handle.net/10397/4980

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@article{c5c79c3151914f7ca45a458eeb8fe2e4,

title = "Epitaxial Pb(Zr0.52Ti0.48)O3/La0.35Nd0.35Sr0.3MnO3heterostructures for fabrication of ferroelectric field-effect transistor",

abstract = "Epitaxial La0.35Nd0.35Sr0.3MnO3(LNSMO) thin films and Pb(Zr0.52Ti0.48)O3(PZT)/LNSMO heterostructures have been grown on LaAlO3(001) substrates by the pulsed laser deposition method. The oxygen concentration in the LNSMO films is quite sensitive to the deposition oxygen pressure and can be controlled during the fabrication process. It is, however, stable against in situ postdeposition thermal treatments. Consequently, the resistivity and the metal-semiconductor transition temperature of the LNSMO films can be tuned and fixed during film growth. Electrical measurements on the Pt/PZT/LNSMO ferroelectric capacitor show a remnant polarization of ∼35 μC/cm2and a coercive field of 30-40 kV/cm at low driving voltages. Switching endurance tests suggest no polarization loss up to about 1010bipolar switching cycles. The advantages of using epitaxial LNSMO films as the semiconducting channel in an all-perovskite ferroelectric field-effect transistor are discussed.",

author = "Wenbin Wu and Wong, {K. H.} and Mak, {Chee Leung} and Choy, {C. L.} and Zhang, {Y. H.}",

year = "2000",

month = aug,

day = "15",

doi = "10.1063/1.1305859",

language = "English",

volume = "88",

pages = "2068--2071",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Epitaxial Pb(Zr0.52Ti0.48)O3/La0.35Nd0.35Sr0.3MnO3heterostructures for fabrication of ferroelectric field-effect transistor

AU - Wu, Wenbin

AU - Wong, K. H.

AU - Mak, Chee Leung

AU - Choy, C. L.

AU - Zhang, Y. H.

PY - 2000/8/15

Y1 - 2000/8/15

N2 - Epitaxial La0.35Nd0.35Sr0.3MnO3(LNSMO) thin films and Pb(Zr0.52Ti0.48)O3(PZT)/LNSMO heterostructures have been grown on LaAlO3(001) substrates by the pulsed laser deposition method. The oxygen concentration in the LNSMO films is quite sensitive to the deposition oxygen pressure and can be controlled during the fabrication process. It is, however, stable against in situ postdeposition thermal treatments. Consequently, the resistivity and the metal-semiconductor transition temperature of the LNSMO films can be tuned and fixed during film growth. Electrical measurements on the Pt/PZT/LNSMO ferroelectric capacitor show a remnant polarization of ∼35 μC/cm2and a coercive field of 30-40 kV/cm at low driving voltages. Switching endurance tests suggest no polarization loss up to about 1010bipolar switching cycles. The advantages of using epitaxial LNSMO films as the semiconducting channel in an all-perovskite ferroelectric field-effect transistor are discussed.

AB - Epitaxial La0.35Nd0.35Sr0.3MnO3(LNSMO) thin films and Pb(Zr0.52Ti0.48)O3(PZT)/LNSMO heterostructures have been grown on LaAlO3(001) substrates by the pulsed laser deposition method. The oxygen concentration in the LNSMO films is quite sensitive to the deposition oxygen pressure and can be controlled during the fabrication process. It is, however, stable against in situ postdeposition thermal treatments. Consequently, the resistivity and the metal-semiconductor transition temperature of the LNSMO films can be tuned and fixed during film growth. Electrical measurements on the Pt/PZT/LNSMO ferroelectric capacitor show a remnant polarization of ∼35 μC/cm2and a coercive field of 30-40 kV/cm at low driving voltages. Switching endurance tests suggest no polarization loss up to about 1010bipolar switching cycles. The advantages of using epitaxial LNSMO films as the semiconducting channel in an all-perovskite ferroelectric field-effect transistor are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0000330028&partnerID=8YFLogxK

U2 - 10.1063/1.1305859

DO - 10.1063/1.1305859

M3 - Journal article

SN - 0021-8979

VL - 88

SP - 2068

EP - 2071

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Epitaxial Pb(Zr_0.52Ti_0.48)O₃/La_0.35Nd_0.35Sr_0.3MnO₃heterostructures for fabrication of ferroelectric field-effect transistor

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