Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si

Jiyan Dai; P. F. Lee; K. H. Wong; H. L W Chan; C. L. Choy

doi:10.1063/1.1585116

Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si

Jiyan Dai
, P. F. Lee
, K. H. Wong
, H. L W Chan
, C. L. Choy

Research output: Journal article publication › Journal article › Academic research › peer-review

55 Citations (Scopus)

Abstract

Epitaxial growth of yttrium-stabilized HfO2high-k gate dielectric thin films was investigated. Films were deposited by pulsed laser deposition at a substrate temperature of 550 °C. Transmission electron microscopy and X-ray photoelectron spectroscopy were used for the analysis.

Original language	English
Pages (from-to)	912-915
Number of pages	4
Journal	Journal of Applied Physics
Volume	94
Issue number	2
DOIs	https://doi.org/10.1063/1.1585116
Publication status	Published - 15 Jul 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)
General Physics and Astronomy

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10.1063/1.1585116

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title = "Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si",

abstract = "Epitaxial growth of yttrium-stabilized HfO2high-k gate dielectric thin films was investigated. Films were deposited by pulsed laser deposition at a substrate temperature of 550 °C. Transmission electron microscopy and X-ray photoelectron spectroscopy were used for the analysis.",

author = "Jiyan Dai and Lee, \{P. F.\} and Wong, \{K. H.\} and Chan, \{H. L W\} and Choy, \{C. L.\}",

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AU - Dai, Jiyan

AU - Lee, P. F.

AU - Wong, K. H.

AU - Chan, H. L W

AU - Choy, C. L.

PY - 2003/7/15

Y1 - 2003/7/15

N2 - Epitaxial growth of yttrium-stabilized HfO2high-k gate dielectric thin films was investigated. Films were deposited by pulsed laser deposition at a substrate temperature of 550 °C. Transmission electron microscopy and X-ray photoelectron spectroscopy were used for the analysis.

AB - Epitaxial growth of yttrium-stabilized HfO2high-k gate dielectric thin films was investigated. Films were deposited by pulsed laser deposition at a substrate temperature of 550 °C. Transmission electron microscopy and X-ray photoelectron spectroscopy were used for the analysis.

UR - https://www.scopus.com/pages/publications/0042267310

U2 - 10.1063/1.1585116

DO - 10.1063/1.1585116

M3 - Journal article

SN - 0021-8979

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JF - Journal of Applied Physics

IS - 2

ER -

Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si

Abstract

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