Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si

Jiyan Dai; P. F. Lee; K. H. Wong; H. L W Chan; C. L. Choy

doi:10.1063/1.1585116

Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si

Jiyan Dai, P. F. Lee, K. H. Wong, H. L W Chan, C. L. Choy

Research output: Journal article publication › Journal article › Academic research › peer-review

54 Citations (Scopus)

Abstract

Epitaxial growth of yttrium-stabilized HfO2high-k gate dielectric thin films was investigated. Films were deposited by pulsed laser deposition at a substrate temperature of 550 °C. Transmission electron microscopy and X-ray photoelectron spectroscopy were used for the analysis.

Original language	English
Pages (from-to)	912-915
Number of pages	4
Journal	Journal of Applied Physics
Volume	94
Issue number	2
DOIs	https://doi.org/10.1063/1.1585116
Publication status	Published - 15 Jul 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)
General Physics and Astronomy

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10.1063/1.1585116

http://hdl.handle.net/10397/407

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title = "Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si",

abstract = "Epitaxial growth of yttrium-stabilized HfO2high-k gate dielectric thin films was investigated. Films were deposited by pulsed laser deposition at a substrate temperature of 550 °C. Transmission electron microscopy and X-ray photoelectron spectroscopy were used for the analysis.",

author = "Jiyan Dai and Lee, {P. F.} and Wong, {K. H.} and Chan, {H. L W} and Choy, {C. L.}",

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AU - Choy, C. L.

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Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si

Abstract

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