Epitaxial growth of yttrium-stabilized HfO2high-k gate dielectric thin films was investigated. Films were deposited by pulsed laser deposition at a substrate temperature of 550 °C. Transmission electron microscopy and X-ray photoelectron spectroscopy were used for the analysis.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)