Epitaxial growth of yttrium-stabilized HfO2 high-k gate dielectric thin films on Si

Jiyan Dai, P. F. Lee, K. H. Wong, H. L W Chan, C. L. Choy

Research output: Journal article publicationJournal articleAcademic researchpeer-review

52 Citations (Scopus)


Epitaxial growth of yttrium-stabilized HfO2high-k gate dielectric thin films was investigated. Films were deposited by pulsed laser deposition at a substrate temperature of 550 °C. Transmission electron microscopy and X-ray photoelectron spectroscopy were used for the analysis.
Original languageEnglish
Pages (from-to)912-915
Number of pages4
JournalJournal of Applied Physics
Issue number2
Publication statusPublished - 15 Jul 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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