Epitaxial growth of SrTiO3thin film on Si by laser molecular beam epitaxy

X. Y. Zhou; J. Miao; J. Y. Dai; H. L.W. Chan; C. L. Choy; Y. Wang; Q. Li

doi:10.1063/1.2430407

Epitaxial growth of SrTiO₃thin film on Si by laser molecular beam epitaxy

X. Y. Zhou
, J. Miao
, J. Y. Dai
, H. L.W. Chan
, C. L. Choy
, Y. Wang
, Q. Li

The Hong Kong Polytechnic University

Research output: Journal article publication › Journal article › Academic research › peer-review

26 Citations (Scopus)

Abstract

SrTi O3 thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTi O3 was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTi O3 Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTi O3 and the interfacial structure. Electrical measurements revealed that the SrTi O3 film was highly resistive.

Original language	English
Article number	012902
Journal	Applied Physics Letters
Volume	90
Issue number	1
DOIs	https://doi.org/10.1063/1.2430407
Publication status	Published - 15 Jan 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2430407

http://hdl.handle.net/10397/432

Cite this

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title = "Epitaxial growth of SrTiO3thin film on Si by laser molecular beam epitaxy",

abstract = "SrTi O3 thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTi O3 was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTi O3 Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTi O3 and the interfacial structure. Electrical measurements revealed that the SrTi O3 film was highly resistive.",

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AU - Zhou, X. Y.

AU - Miao, J.

AU - Dai, J. Y.

AU - Chan, H. L.W.

AU - Choy, C. L.

AU - Wang, Y.

AU - Li, Q.

PY - 2007/1/15

Y1 - 2007/1/15

N2 - SrTi O3 thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTi O3 was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTi O3 Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTi O3 and the interfacial structure. Electrical measurements revealed that the SrTi O3 film was highly resistive.

AB - SrTi O3 thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTi O3 was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTi O3 Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTi O3 and the interfacial structure. Electrical measurements revealed that the SrTi O3 film was highly resistive.

UR - https://www.scopus.com/pages/publications/33846040779

U2 - 10.1063/1.2430407

DO - 10.1063/1.2430407

M3 - Journal article

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VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012902

ER -

Epitaxial growth of SrTiO₃thin film on Si by laser molecular beam epitaxy

Abstract

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