Epitaxial growth of SrTiO3thin film on Si by laser molecular beam epitaxy

X. Y. Zhou, J. Miao, J. Y. Dai, H. L.W. Chan, C. L. Choy, Y. Wang, Q. Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

24 Citations (Scopus)


SrTi O3 thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTi O3 was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTi O3 Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTi O3 and the interfacial structure. Electrical measurements revealed that the SrTi O3 film was highly resistive.
Original languageEnglish
Article number012902
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 15 Jan 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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