Epitaxial growth of (PbZr)TiO₃films on LaAlO₃by sol-gel method using inorganic zirconium source

Epitaxial ferroelectric Pb(Zr0.52Ti0.48)O3(PZT) thin films were successfully fabricated on LaAlO3substrates using an inorganic zirconium source by the sol-gel method. Single-phase perovskite formation was achieved by rapid thermal anneal at 650°C. Temperature dependence of the structural and morphological characteristics of sol-gel-derived PZT films were investigated by means of X-ray diffraction θ-2θ scan, rocking curve, and φ-scan, scanning electron microscopy, and atomic force microscopy. The films showed better epitaxy and density with smaller roughness. In addition, the characteristic of sol-gel-derived PZT thin films using the mixed PZT powder/precursor solution was also studied.