Epitaxial growth of (PbZr)TiO3films on LaAlO3by sol-gel method using inorganic zirconium source

A. D. Li, Q. Y. Shao, Y. J. Wang, Chee Leung Mak, K. H. Wong, D. Wu, Naiben Ming

Research output: Journal article publicationJournal articleAcademic researchpeer-review

3 Citations (Scopus)


Epitaxial ferroelectric Pb(Zr0.52Ti0.48)O3(PZT) thin films were successfully fabricated on LaAlO3substrates using an inorganic zirconium source by the sol-gel method. Single-phase perovskite formation was achieved by rapid thermal anneal at 650°C. Temperature dependence of the structural and morphological characteristics of sol-gel-derived PZT films were investigated by means of X-ray diffraction θ-2θ scan, rocking curve, and φ-scan, scanning electron microscopy, and atomic force microscopy. The films showed better epitaxy and density with smaller roughness. In addition, the characteristic of sol-gel-derived PZT thin films using the mixed PZT powder/precursor solution was also studied.
Original languageEnglish
Pages (from-to)2667-2675
Number of pages9
JournalMaterials Research Bulletin
Issue number15
Publication statusPublished - 1 Dec 2001


  • A. Thin films
  • B. Epitaxial growth
  • B. Sol-gel chemistry
  • C. X-ray diffraction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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