TY - JOUR
T1 - Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer
AU - Zhai, Li
AU - Gebre, Sara T.
AU - Chen, Bo
AU - Xu, Dan
AU - Chen, Junze
AU - Li, Zijian
AU - Liu, Yawei
AU - Yang, Hua
AU - Ling, Chongyi
AU - Ge, Yiyao
AU - Zhai, Wei
AU - Chen, Changsheng
AU - Ma, Lu
AU - Zhang, Qinghua
AU - Li, Xuefei
AU - Yan, Yujie
AU - Huang, Xinyu
AU - Li, Lujiang
AU - Guan, Zhiqiang
AU - Tao, Chen Lei
AU - Huang, Zhiqi
AU - Wang, Hongyi
AU - Liang, Jinze
AU - Zhu, Ye
AU - Lee, Chun Sing
AU - Wang, Peng
AU - Zhang, Chunfeng
AU - Gu, Lin
AU - Du, Yonghua
AU - Lian, Tianquan
AU - Zhang, Hua
AU - Wu, Xue Jun
N1 - Funding Information:
This work was supported by the National Natural Science Foundation of China (21871129 and 22271142), the Fundamental Research Funds for the Central Universities (020514380204), “Innovation & Entrepreneurship Talents Plan” of Jiangsu Province, and start-up funds from Nanjing University. H.Z. thanks the support from ITC via Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), and the Start-Up Grant (Project No. 9380100), and the grants (Project Nos. 9678272 and 1886921) from the City University of Hong Kong. T.L. acknowledges the support from the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Solar Photochemistry Program under Award Number (DE-SC0008798). S.T.G. acknowledges support from an AGEP supplement to NSF award number CHE-2004080. L.G. thanks the Beijing Natural Science Foundation (Z190010), National Natural Science Foundation of China (51991344, 52072400, 52025025). This research used 7-BM and 8-BM of the National Synchrotron Light Source II, a U.S. Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Brookhaven National Laboratory under Contract No. DE-SC0012704.
Publisher Copyright:
© 2023, The Author(s).
PY - 2023/12
Y1 - 2023/12
N2 - Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.
AB - Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.
UR - http://www.scopus.com/inward/record.url?scp=85158018072&partnerID=8YFLogxK
U2 - 10.1038/s41467-023-38237-7
DO - 10.1038/s41467-023-38237-7
M3 - Journal article
C2 - 37137913
AN - SCOPUS:85158018072
SN - 2041-1723
VL - 14
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 2538
ER -