Epitaxial growth and dielectric properties of Pb0.4Sr0.6Ti O3thin films on (00l) -oriented metallic Li0.3Ni0.7O2coated MgO substrates

X. T. Li, P. Y. Du, Chee Leung Mak, K. H. Wong

Research output: Journal article publicationJournal articleAcademic researchpeer-review

24 Citations (Scopus)

Abstract

Highly (00l) -oriented Li0.3 Ni0.7 O2 thin films have been fabricated on (001) MgO substrates by pulsed laser deposition. The Pb0.4 Sr0.6 Ti O3 (PST40) thin film deposited subsequently also shows a significant (00l) -oriented texture. Both the PST40 and Li0.3 Ni0.7 O2 have good epitaxial behavior. The epitaxial growth of the PST40 thin film is more perfect with the Li0.3 Ni0.7 O2 buffer layer due to the less distortion in the film. The dielectric tunability of the PST40 thin film with Li0.3 Ni0.7 O2 buffer layer therefore reaches 70%, which is 75% higher than that without Li0.3 Ni0.7 O2 buffer layer, and the dielectric loss of the PST40 thin film is 0.06.
Original languageEnglish
Article number262906
JournalApplied Physics Letters
Volume90
Issue number26
DOIs
Publication statusPublished - 2 Aug 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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