Epitaxial ferroelectric Hf_0.5Zr_0.5O₂ thin film on a buffered YSZ substrate through interface reaction

Keyphrases

• Epitaxial 100%
• Yttria-stabilized Zirconia 100%
• Interface Reaction 100%
• Zirconia Substrate 100%
• Hf0.5Zr0.5O2 Thin Film 100%
• Ferroelectric Hf0.5Zr0.5O2 100%
• Hf0.5Zr0.5O2 Films 66%
• X Ray Diffraction 33%
• Pulsed Laser Deposition 33%
• Remnant Polarization 33%
• Coercive Field 33%
• Phase Change 33%
• High-resolution Transmission Electron Microscopy (HRTEM) 33%
• Epitaxial Relationship 33%
• (111)-oriented 33%
• Epitaxial Growth 33%
• Bottom Electrode 33%
• Non-centrosymmetric 33%
• Ferroelectric Behavior 33%
• Nanodomains 33%
• Interface Strain 33%
• Ferroelectric State 33%
• X-ray Absorption Spectroscopy 33%
• Hf0.5Zr0.5O2 33%
• TiO2 Buffer Layer 33%
• Piezoresponse Force Microscopy 33%
• Polar Domain 33%
• Microstructural Origin 33%

Material Science

• Yttria Stabilized Zirconia 100%
• Ferroelectric Material 100%
• Film 100%
• Thin Films 100%
• Epitaxy 33%
• Buffer Layer 33%
• Ferroelectricity 33%
• Pulsed Laser Deposition 33%
• X-Ray Diffraction 33%
• X-Ray Absorption Spectroscopy 33%
• High-Resolution Transmission Electron Microscopy 33%
• Titanium Dioxide 33%